- Mounting Style :
- Minimum Operating Temperature :
- Maximum Operating Temperature :
- Number of Channels :
- Transistor Polarity :
- Vds - Drain-Source Breakdown Voltage :
- Id - Continuous Drain Current :
- Vgs th - Gate-Source Threshold Voltage :
- Qg - Gate Charge :
- Applied Filters :
36 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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1,210
In-stock
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Fairchild Semiconductor | MOSFET SuperFET2 800V 290mOhm D2PAK PKG | 20 V, 30 V | SMD/SMT | TO-263-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 800 V | 17 A | 290 mOhms | 2.5 V | 58 nC | Enhancement | SuperFET II | |||
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799
In-stock
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Fairchild Semiconductor | MOSFET 800V SuperFET2 N-Chnl Mosfet | 20 V, 30 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 800 V | 17 A | 290 mOhms | 2.5 V | 58 nC | Enhancement | SuperFET II | |||
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2,370
In-stock
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STMicroelectronics | MOSFET N-channel 500 V 11 A Fdmesh | SMD/SMT | TO-252-3 | Reel | 1 Channel | Si | N-Channel | 500 V | 11 A | 290 mOhms | ||||||||||
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3,140
In-stock
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Fairchild Semiconductor | MOSFET 200V N-Ch QFET Logic Level | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 200 V | 7.6 A | 290 mOhms | Enhancement | ||||||
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2,360
In-stock
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Fairchild Semiconductor | MOSFET 300V N-Ch MOSFET | 30 V | Through Hole | TO-220FP-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 300 V | 14 A | 290 mOhms | Enhancement | ||||||
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395
In-stock
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Fairchild Semiconductor | MOSFET SuperFET2 800V 290 mOhm | 20 V | Through Hole | TO-220FP-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 800 V | 17 A | 290 mOhms | 2.5 V | 58 nC | Enhancement | SuperFET II | |||
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13,248
In-stock
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Nexperia | MOSFET N-CH TRENCH DL 20V | 12 V | SMD/SMT | SOT-363-6 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel | 20 V | 860 mA | 290 mOhms | Enhancement | ||||||
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240
In-stock
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Infineon Technologies | MOSFET AUTOMOTIVE | Through Hole | TO-247-3 | Tube | 1 Channel | Si | N-Channel | 800 V | 290 mOhms | CoolMOS | ||||||||||
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775
In-stock
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Infineon Technologies | MOSFET Automotive MOSFET 150V, 295mOhm, D2Pak | SMD/SMT | TO-252-3 | Reel | Si | P-Channel | - 150 V | - 13 A | 290 mOhms | |||||||||||
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701
In-stock
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Fairchild Semiconductor | MOSFET 100V P-Channel QFET | 30 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | P-Channel | - 100 V | - 11.5 A | 290 mOhms | Enhancement | QFET | |||||
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476
In-stock
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Fairchild Semiconductor | MOSFET 300V N-Ch MOSFET | 30 V | SMD/SMT | TO-263-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 300 V | 14 A | 290 mOhms | Enhancement | ||||||
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966
In-stock
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Fairchild Semiconductor | MOSFET 300V N-Channel QFET | 30 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 300 V | 9.1 A | 290 mOhms | Enhancement | QFET | |||||
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58
In-stock
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Fairchild Semiconductor | MOSFET UniFET2 600V | 30 V | Through Hole | TO-220FP-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 17 A | 290 mOhms | UniFET | ||||||
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666
In-stock
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Infineon Technologies | MOSFET MOSFT PCh -150V -13A 290mOhm 44nC | 20 V | Through Hole | TO-220-3 | Tube | 1 Channel | Si | P-Channel | - 150 V | - 13 A | 290 mOhms | 44 nC | ||||||||
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297
In-stock
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Infineon Technologies | MOSFET MOSFT PCh -150V -13A 290mOhm 44nC | 20 V | SMD/SMT | TO-252-3 | Reel | 1 Channel | Si | P-Channel | - 150 V | - 13 A | 290 mOhms | 44 nC | ||||||||
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275
In-stock
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STMicroelectronics | MOSFET N-channel 500 V 11 A Fdmesh | Through Hole | TO-220-3 | Tube | 1 Channel | Si | N-Channel | 500 V | 11 A | 290 mOhms | ||||||||||
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230
In-stock
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STMicroelectronics | MOSFET N-CH 600V 0.25Ohm 13A FDMesh II | 25 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 650 V | 13 A | 290 mOhms | 4 V | 34 nC | |||||
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631
In-stock
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Infineon Technologies | MOSFET 1 P-CH -150V HEXFET 290mOhms 44nC | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | P-Channel | - 150 V | - 13 A | 290 mOhms | - 2 V to - 4 V | 44 nC | Enhancement | ||||
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24
In-stock
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IXYS | MOSFET 20 Amps 800V 0.29 Rds | 30 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 800 V | 20 A | 290 mOhms | 5 V | 150 nC | Enhancement | PolarHV, ISOPLUS247, HiPerFET | |||
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14,627
In-stock
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Toshiba | MOSFET SM Sig N-CH MOS 30V 3.5A 12V VGSS | 12 V | SMD/SMT | SOT-23-3 | Reel | 1 Channel | Si | N-Channel | 30 V | 3.5 A | 290 mOhms | |||||||||
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71
In-stock
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Microsemi | MOSFET Power MOSFET - MOS8 | 30 V | Through Hole | TO-264-3 | - 55 C | + 150 C | Reel | Si | N-Channel | 1000 V | 37 A | 290 mOhms | 4 V | 305 nC | Enhancement | POWER MOS 8 | ||||
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GET PRICE |
220,700
In-stock
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onsemi | MOSFET P-CH/100V/Q-FET | TO-252-3 | Reel | 1 Channel | Si | P-Channel | - 100 V | - 9.4 A | 290 mOhms | ||||||||||
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10,000
In-stock
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Nexperia | MOSFET 20V Single N-channel Trench MOSFET | 8 V | SMD/SMT | DFN1006B-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 20 V | 1 A | 290 mOhms | 450 mV | 1.2 nC | Enhancement | ||||
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VIEW | IXYS | MOSFET SMPD MOSFETs Power Device | SMD/SMT | SMPD-24 | Tube | Si | N-Channel | 1100 V | 24 A | 290 mOhms | |||||||||||
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VIEW | Infineon Technologies | MOSFET Automotive MOSFET 150V, 295mOhm, D2Pak | SMD/SMT | TO-252-3 | Tube | Si | P-Channel | - 150 V | - 13 A | 290 mOhms | |||||||||||
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VIEW | STMicroelectronics | MOSFET N Ch 600V 0.26 Ohm 20A | 30 V | SMD/SMT | TO-263-3 | - 65 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 600 V | 20 A | 290 mOhms | Enhancement | ||||||
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VIEW | STMicroelectronics | MOSFET N-Ch 600 Volt 20 Amp | 30 V | SMD/SMT | TO-263-3 | - 65 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 600 V | 20 A | 290 mOhms | Enhancement | ||||||
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764
In-stock
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STMicroelectronics | MOSFET N-CH 600V 0.25Ohm 13A FDmesh II | 25 V | SMD/SMT | TO-263-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 650 V | 13 A | 290 mOhms | 4 V | 34 nC | |||||
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VIEW | STMicroelectronics | MOSFET N-Ch 600 Volt 20 Amp | 30 V | Through Hole | TO-220-3 | - 65 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 20 A | 290 mOhms | Enhancement | ||||||
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VIEW | STMicroelectronics | MOSFET N-CH 600V 0.25Ohm 13A Fdmesh II | 25 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 650 V | 13 A | 290 mOhms | 4 V | 34 nC |
