- Vgs - Gate-Source Voltage :
- Package / Case :
- Maximum Operating Temperature :
- Number of Channels :
- Id - Continuous Drain Current :
- Qg - Gate Charge :
- Tradename :
10 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
7,332
In-stock
|
Fairchild Semiconductor | MOSFET 30V N-Channel PowerTrench MOSFET | 20 V | SMD/SMT | SSOT-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 8 A | 16 mOhms | PowerTrench | |||||||
|
8,327
In-stock
|
Fairchild Semiconductor | MOSFET N-CHAN 30V 9A 2.4W | SMD/SMT | MicroFET-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 9 A | 16 mOhms | PowerTrench | ||||||||
|
3,907
In-stock
|
Fairchild Semiconductor | MOSFET DUAL N-CHANNEL PowerTrench | 20 V | SMD/SMT | Power-33-8 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel | 30 V | 18 A | 16 mOhms | 7.3 nC, 16 nC | Enhancement | PowerTrench | |||||
|
4,694
In-stock
|
Diodes Incorporated | MOSFET 30V N-Ch Enh 30Vds 20Vgs 1415pF 25.1nC | 20 V, 20 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 37.8 A | 16 mOhms | 1.3 V | 25.1 nC | Enhancement | |||||
|
2,454
In-stock
|
IR / Infineon | MOSFET 30V 1 N-CH HEXFET 12mOhms 22nC | 16 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 30 V | 64 A | 16 mOhms | 22 nC | Enhancement | ||||||
|
7,939
In-stock
|
Diodes Incorporated | MOSFET N-CHANNEL EH MODE 30V 10A 12mOhm | 20 V, 20 V | SMD/SMT | U-DFN2020-E-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 10 A | 16 mOhms | 1.4 V | 25.1 nC | Enhancement | |||||
|
2,841
In-stock
|
Diodes Incorporated | MOSFET MOSFET N-CHANNEL | 25 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 10 A | 16 mOhms | 4.7 nC | |||||||
|
6,573
In-stock
|
Diodes Incorporated | MOSFET N-CHANNEL EH MODE 30V 10A 12mOhm | 20 V, 20 V | SMD/SMT | U-DFN2020-E-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 10 A | 16 mOhms | 1.4 V | 25.1 nC | Enhancement | |||||
|
10,000
In-stock
|
Diodes Incorporated | MOSFET N-Ch 30V Enh FET 20Vgss 1.18W 1415pF | 20 V, 20 V | SMD/SMT | POWERDI5060-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 10.8 A | 16 mOhms | 1.4 V | 25.1 nC | Enhancement | PowerDI | ||||
|
VIEW | STMicroelectronics | MOSFET N-Ch 30V 14m 35A 16mOhm STripFET V | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 30 V | 35 A | 16 mOhms | 5.4 nC | Enhancement |