MOSFET - Kaimeite

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IMAGE	PART NO.	PRICE	QUANTITY		STOCK	MANUFACTURE	DESCRIPTION	Vgs - Gate-Source Voltage	Mounting Style	Package / Case	Minimum Operating Temperature	Maximum Operating Temperature	Packaging	Number of Channels	Technology	Transistor Polarity	Vds - Drain-Source Breakdown Voltage	Id - Continuous Drain Current	Rds On - Drain-Source Resistance	Vgs th - Gate-Source Threshold Voltage	Qg - Gate Charge	Channel Mode
	IRLR3110ZPBF	1+ $1.540 10+ $1.310 100+ $1.050 500+ $0.919		PDF RFQ	1,319 In-stock	Infineon Technologies	MOSFET 100V HEXFET 14mOhms 15nC	16 V	SMD/SMT	TO-252-3	- 55 C	+ 175 C	Tube	1 Channel	Si	N-Channel	100 V	63 A	16 mOhms	2.5 V	34 nC	Enhancement
	DMT6016LPS-13	1+ $0.630 10+ $0.520 100+ $0.317 1000+ $0.245 2500+ $0.209		PDF RFQ	4,220 In-stock	Diodes Incorporated	MOSFET 60V N-Ch Enh FET 16mOhm 10Vgs 8.9A	20 V	SMD/SMT	POWERDI5060-8	- 55 C	+ 150 C	Reel	1 Channel	Si	N-Channel	60 V	10.6 A	16 mOhms	2.5 V	17 nC	Enhancement
	DMT6016LSS-13	1+ $0.530 10+ $0.434 100+ $0.265 1000+ $0.205 2500+ $0.174		PDF RFQ	5,000 In-stock	Diodes Incorporated	MOSFET 60V N-Ch Enh FET 16mOhm 10Vgs 8.9A	20 V	SMD/SMT	SO-8	- 55 C	+ 150 C	Reel	1 Channel	Si	N-Channel	60 V	10.6 A	16 mOhms	2.5 V	17 nC	Enhancement

IRLR3110ZPBF

IRLR3110ZPBF

Infineon Technologies

MOSFET 100V HEXFET 14mOhms 15nC

Stock : 1,319

1+: $1.540

10+: $1.310

100+: $1.050

500+: $0.919

DMT6016LPS-13

DMT6016LPS-13

Diodes Incorporated

MOSFET 60V N-Ch Enh FET 16mOhm 10Vgs 8.9A

Stock : 4,220

1+: $0.630

10+: $0.520

100+: $0.317

1000+: $0.245

2500+: $0.209

DMT6016LSS-13

DMT6016LSS-13

Diodes Incorporated

MOSFET 60V N-Ch Enh FET 16mOhm 10Vgs 8.9A

Stock : 5,000

1+: $0.530

10+: $0.434

100+: $0.265

1000+: $0.205

2500+: $0.174

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