- Vgs - Gate-Source Voltage :
- Maximum Operating Temperature :
- Transistor Polarity :
- Id - Continuous Drain Current :
- Vgs th - Gate-Source Threshold Voltage :
- Qg - Gate Charge :
- Tradename :
- Applied Filters :
27 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
4,700
In-stock
|
onsemi | MOSFET 60V T1 PCH DPAK | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | P-Channel | - 60 V | - 61 A | 16 mOhms | 85 nC | |||||||
|
4,756
In-stock
|
IR / Infineon | MOSFET MOSFT 55V 56A 16mOhm 70nC | 20 V | SMD/SMT | TO-252-3 | Reel | 1 Channel | Si | N-Channel | 55 V | 56 A | 16 mOhms | 70 nC | |||||||||
|
1,319
In-stock
|
Infineon Technologies | MOSFET 100V HEXFET 14mOhms 15nC | 16 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 100 V | 63 A | 16 mOhms | 2.5 V | 34 nC | Enhancement | |||||
|
1,771
In-stock
|
Fairchild Semiconductor | MOSFET 75V 50a .16Ohms/VGS=1V | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 75 V | 50 A | 16 mOhms | Enhancement | PowerTrench | ||||||
|
4,694
In-stock
|
Diodes Incorporated | MOSFET 30V N-Ch Enh 30Vds 20Vgs 1415pF 25.1nC | 20 V, 20 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 37.8 A | 16 mOhms | 1.3 V | 25.1 nC | Enhancement | |||||
|
1,738
In-stock
|
IR / Infineon | MOSFET MOSFT 75V 53A 16mOhm 50nC Qg | 20 V | SMD/SMT | TO-252-3 | Reel | 1 Channel | Si | N-Channel | 75 V | 53 A | 16 mOhms | 50 nC | |||||||||
|
2,454
In-stock
|
IR / Infineon | MOSFET 30V 1 N-CH HEXFET 12mOhms 22nC | 16 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 30 V | 64 A | 16 mOhms | 22 nC | Enhancement | ||||||
|
754
In-stock
|
Fairchild Semiconductor | MOSFET Trans N-Ch 75V 9A | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 75 V | 50 A | 16 mOhms | Enhancement | |||||||
|
46,200
In-stock
|
Infineon Technologies | MOSFET MV POWER MOS | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 150 V | 50 A | 16 mOhms | 2 V | 31 nC | Enhancement | |||||
|
367
In-stock
|
STMicroelectronics | MOSFET N-Ch 60 Volt 35 Amp | 16 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 60 V | 35 A | 16 mOhms | Enhancement | |||||||
|
985
In-stock
|
onsemi | MOSFET NFET 60V 34A 18MOHM | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 60 V | 46 A | 16 mOhms | 2 V | 29 nC | ||||||
|
1,400
In-stock
|
Infineon Technologies | MOSFET 55V 1 N-CH HEXFET 16mOhms 70nC | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 55 V | 56 A | 16 mOhms | 70 nC | Enhancement | ||||||
|
4,000
In-stock
|
Infineon Technologies | MOSFET 55V N-CH HEXFET 16mOhms 70nC | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 55 V | 56 A | 16 mOhms | 70 nC | Enhancement | ||||||
|
VIEW | Infineon Technologies | MOSFET AUTO 100V 1 N-CH HEXFET 14mOhms | 16 V | SMD/SMT | TO-252-3 | Reel | 1 Channel | Si | N-Channel | 100 V | 63 A | 16 mOhms | 34 nC | |||||||||
|
VIEW | Infineon Technologies | MOSFET AUTO 75V 1 N-CH HEXFET 16mOhms | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 75 V | 3.1 A | 16 mOhms | Enhancement | |||||||
|
VIEW | Infineon Technologies | MOSFET AUTO 55V 1 N-CH HEXFET 16mOhms | 20 V | SMD/SMT | TO-252-3 | - 55 C | Reel | 1 Channel | Si | N-Channel | 55 V | 56 A | 16 mOhms | 70 nC | Enhancement | |||||||
|
VIEW | Infineon Technologies | MOSFET AUTO 100V 1 N-CH HEXFET 14mOhms | 16 V | SMD/SMT | TO-252-3 | Tube | 1 Channel | Si | N-Channel | 100 V | 63 A | 16 mOhms | 34 nC | |||||||||
|
VIEW | Infineon Technologies | MOSFET AUTO 55V 1 N-CH HEXFET 16mOhms | 20 V | SMD/SMT | TO-252-3 | - 55 C | Tube | 1 Channel | Si | N-Channel | 55 V | 56 A | 16 mOhms | 70 nC | Enhancement | |||||||
|
VIEW | Infineon Technologies | MOSFET AUTO 75V 1 N-CH HEXFET 16mOhms | 20 V | SMD/SMT | TO-252-3 | - 55 C | Tube | 1 Channel | Si | N-Channel | 75 V | 53 A | 16 mOhms | 50 nC | Enhancement | |||||||
|
VIEW | STMicroelectronics | MOSFET N-Ch 30V 14m 35A 16mOhm STripFET V | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 30 V | 35 A | 16 mOhms | 5.4 nC | Enhancement | ||||||
|
1,190
In-stock
|
IR / Infineon | MOSFET 75V 1 N-CH HEXFET 16mOhms 50nC | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 75 V | 53 A | 16 mOhms | 2 V to 4 V | 50 nC | Enhancement | |||||
|
60,000
In-stock
|
Infineon Technologies | MOSFET N-Ch 150V 50A DPAK-2 OptiMOS 3 | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 150 V | 50 A | 16 mOhms | 2 V | 31 nC | Enhancement | OptiMOS | ||||
|
VIEW | IR / Infineon | MOSFET AUTO 100V 1 N-CH HEXFET 14mOhms | 16 V | SMD/SMT | TO-252-3 | Reel | 1 Channel | Si | N-Channel | 100 V | 63 A | 16 mOhms | 34 nC | |||||||||
|
VIEW | IR / Infineon | MOSFET AUTO 55V 1 N-CH HEXFET 16mOhms | 20 V | SMD/SMT | TO-252-3 | - 55 C | Reel | 1 Channel | Si | N-Channel | 55 V | 56 A | 16 mOhms | 70 nC | Enhancement | |||||||
|
VIEW | IR / Infineon | MOSFET AUTO 75V 1 N-CH HEXFET 16mOhms | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 75 V | 3.1 A | 16 mOhms | Enhancement | |||||||
|
VIEW | IR / Infineon | MOSFET AUTO 55V 1 N-CH HEXFET 16mOhms | 20 V | SMD/SMT | TO-252-3 | - 55 C | Reel | 1 Channel | Si | N-Channel | 55 V | 56 A | 16 mOhms | 70 nC | Enhancement | |||||||
|
VIEW | IR / Infineon | MOSFET AUTO 75V 1 N-CH HEXFET 16mOhms | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 75 V | 3.1 A | 16 mOhms | Enhancement |