- Vgs - Gate-Source Voltage :
- Mounting Style :
- Package / Case :
- Maximum Operating Temperature :
- Vds - Drain-Source Breakdown Voltage :
- Id - Continuous Drain Current :
- Vgs th - Gate-Source Threshold Voltage :
- Qg - Gate Charge :
- Tradename :
6 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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7,379
In-stock
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Fairchild Semiconductor | MOSFET SO-8 | 8 V | SMD/SMT | SO-8 | - 55 C | + 175 C | Reel | 1 Channel | Si | P-Channel | - 20 V | - 13.5 A | 8.5 mOhms | Enhancement | PowerTrench | |||||
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937
In-stock
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Fairchild Semiconductor | MOSFET SO-8SNGLPCH20V/8V | 8 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 20 V | - 13.5 A | 8.5 mOhms | 86 nC | PowerTrench | |||||
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371
In-stock
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onsemi | MOSFET PCH 4V DRIVE SERIES | 20 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | P-Channel | - 75 V | - 68 A | 8.5 mOhms | - 2.6 V | 300 nC | Enhancement | ||||
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1,355
In-stock
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Diodes Incorporated | MOSFET FET BVDSS 25V 30V P-Ch 0.94W 2246pF | +/- 25 V | SMD/SMT | PowerDI3333-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 30 V | - 11.5 A | 8.5 mOhms | - 3 V | 41 nC | Enhancement | ||||
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2,157
In-stock
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Diodes Incorporated | MOSFET 30V P-Ch Enh Mode 30Vgss 6807pF 139nC | 20 V | SMD/SMT | POWERDI5060-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 30 V | - 13.2 A | 8.5 mOhms | - 1.6 V | 139 nC | Enhancement | PowerDI | |||
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3
In-stock
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IR / Infineon | MOSFET 1 P-CH -30V HEXFET 11.9mOhms 18nC | 25 V | SMD/SMT | SO-8 | Tube | 1 Channel | Si | P-Channel | - 30 V | - 12 A | 8.5 mOhms | 18 nC |