- Minimum Operating Temperature :
- Maximum Operating Temperature :
- Number of Channels :
- Id - Continuous Drain Current :
- Vgs th - Gate-Source Threshold Voltage :
- Qg - Gate Charge :
- Tradename :
16 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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4,804
In-stock
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Fairchild Semiconductor | MOSFET 30V Single N-Channel PowerTrench MOSFET | 20 V | SMD/SMT | MicroFET-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 11 A | 13 mOhms | 2 V | 8 nC | PowerTrench | ||||
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3,439
In-stock
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IR / Infineon | MOSFET MOSFT 30V 14A 8.7mOhm 8.1nC Qg | 20 V | SMD/SMT | SO-8 | Reel | 1 Channel | Si | N-Channel | 30 V | 14 A | 13 mOhms | 8.1 nC | ||||||||
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1,474
In-stock
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IR / Infineon | MOSFET 30V 1 N-CH HEXFET 9mOhms 52nC | 20 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 12.5 A | 13 mOhms | 1 V | 52 nC | Enhancement | ||||
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3,168
In-stock
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IR / Infineon | MOSFET MOSFT 30V 14A 8.7mOhm 8.1nC | 20 V | SMD/SMT | SO-8 | Reel | 1 Channel | Si | N-Channel | 30 V | 14 A | 13 mOhms | 8.1 nC | ||||||||
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1,282
In-stock
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Infineon Technologies | MOSFET 30V 1 N-CH HEXFET 8.7mOhms 8.1nC | 20 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 30 V | 14 A | 13 mOhms | 2.35 V | 8.1 nC | |||||
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2,182
In-stock
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IR / Infineon | MOSFET 30V 1 N-CH HEXFET 12.5mOhms 24nC | 20 V | SMD/SMT | PQFN-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 35 A | 13 mOhms | 1.35 V to 2.35 V | 8.3 nC | Enhancement | StrongIRFET | |||
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1,116
In-stock
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Nexperia | MOSFET PMPB13XNE/SOT1220/REEL 7" Q1/T | SMD/SMT | DFN2020MD-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 11.3 A | 13 mOhms | 0.65 V | 24 nC | Enhancement | |||||
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9,947
In-stock
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Infineon Technologies | MOSFET N-Ch 30V 35A TSDSON-8 OptiMOS 3 | 20 V | SMD/SMT | TSDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 35 A | 13 mOhms | Enhancement | OptiMOS | |||||
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2,500
In-stock
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onsemi | MOSFET NFET DPAK 30V 40A 13MOHM | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 9 A | 13 mOhms | Enhancement | ||||||
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2,380
In-stock
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onsemi | MOSFET NFET U8FL 30V 22A 17MOHM | 20 V | SMD/SMT | WDFN-8 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 30 V | 22.1 A | 13 mOhms | 1.3 V | 10.3 nC | Enhancement | ||||
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1,993
In-stock
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STMicroelectronics | MOSFET N-Ch 30 Volt 55 Amp | 16 V | SMD/SMT | TO-263-3 | - 60 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 30 V | 55 A | 13 mOhms | Enhancement | ||||||
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VIEW | Toshiba | MOSFET MOSFET 30V 24A | TSON-Advance-8 | Reel | 1 Channel | Si | N-Channel | 30 V | 25 A | 13 mOhms | |||||||||||
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1,617
In-stock
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IR / Infineon | MOSFET 30V 1 N-CH HEXFET 9mOhms 52nC | 20 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 30 V | 12.5 A | 13 mOhms | 1 V | 52 nC | Enhancement | ||||
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669
In-stock
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IR / Infineon | MOSFET 30V 1 N-CH HEXFET 10mOhms 9.5nC | 20 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 30 V | 13 A | 13 mOhms | 9.5 nC | Enhancement | |||||
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6
In-stock
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IR / Infineon | MOSFET 30V DUAL N-CH HEXFET 30V VGS MAX | 20 V | SMD/SMT | SO-8 | Tube | 2 Channel | Si | N-Channel | 30 V | 11 A | 13 mOhms | 14 nC | ||||||||
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VIEW | Toshiba | MOSFET N-Ch 30V FET 25A 30W 30nC | SMD/SMT | TSON-Advance-8 | Reel | 1 Channel | Si | N-Channel | 30 V | 25 A | 13 mOhms | 30 nC |
