- Maximum Operating Temperature :
- Number of Channels :
- Transistor Polarity :
- Vds - Drain-Source Breakdown Voltage :
- Id - Continuous Drain Current :
- Vgs th - Gate-Source Threshold Voltage :
- Qg - Gate Charge :
- Tradename :
- Applied Filters :
17 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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8,939
In-stock
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Fairchild Semiconductor | MOSFET SO-8 | 12 V | SMD/SMT | SO-8 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 40 V | 11 A | 13 mOhms | Enhancement | PowerTrench | |||||
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3,181
In-stock
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IR / Infineon | MOSFET MOSFT 40V 11A 13mOhm 29nC | 12 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 40 V | 10 A | 13 mOhms | 2 V | 29 nC | |||||
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2,966
In-stock
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Fairchild Semiconductor | MOSFET -40V P-Channel PowerTrench | 20 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 40 V | - 10.8 A | 13 mOhms | Enhancement | PowerTrench | |||||
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2,688
In-stock
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Fairchild Semiconductor | MOSFET LOW VOLTAGE | 20 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel | 20 V | 7.5 A | 13 mOhms | Enhancement | PowerTrench | |||||
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3,568
In-stock
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Fairchild Semiconductor | MOSFET SO-8 P-CH -20V | 8 V | SMD/SMT | SO-8 | - 55 C | + 175 C | Reel | 1 Channel | Si | P-Channel | - 20 V | - 10 A | 13 mOhms | Enhancement | PowerTrench | |||||
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3,786
In-stock
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Fairchild Semiconductor | MOSFET SO-8 | 20 V | SMD/SMT | SO-8 | - 55 C | + 175 C | Reel | 1 Channel | Si | P-Channel | - 40 V | - 11 A | 13 mOhms | Enhancement | PowerTrench | |||||
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4,918
In-stock
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Infineon Technologies | MOSFET P-Ch -30V -11.3A DSO-8 OptiMOS P | 25 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 30 V | - 11.3 A | 13 mOhms | - 61 nC | Enhancement | OptiMOS | ||||
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3,765
In-stock
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Fairchild Semiconductor | MOSFET SO-8 DUAL N-CH 20V | 8 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel | 20 V | 7.5 A | 13 mOhms | Enhancement | PowerTrench | |||||
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3,439
In-stock
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IR / Infineon | MOSFET MOSFT 30V 14A 8.7mOhm 8.1nC Qg | 20 V | SMD/SMT | SO-8 | Reel | 1 Channel | Si | N-Channel | 30 V | 14 A | 13 mOhms | 8.1 nC | ||||||||
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1,708
In-stock
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Infineon Technologies | MOSFET DUAL -30V P-CH HEXFET 16.3mOhms | 20 V | SMD/SMT | SO-8 | Tube | 2 Channel | Si | P-Channel | - 30 V | - 9.2 A | 13 mOhms | 19 nC | ||||||||
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1,474
In-stock
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IR / Infineon | MOSFET 30V 1 N-CH HEXFET 9mOhms 52nC | 20 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 12.5 A | 13 mOhms | 1 V | 52 nC | Enhancement | ||||
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3,168
In-stock
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IR / Infineon | MOSFET MOSFT 30V 14A 8.7mOhm 8.1nC | 20 V | SMD/SMT | SO-8 | Reel | 1 Channel | Si | N-Channel | 30 V | 14 A | 13 mOhms | 8.1 nC | ||||||||
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1,282
In-stock
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Infineon Technologies | MOSFET 30V 1 N-CH HEXFET 8.7mOhms 8.1nC | 20 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 30 V | 14 A | 13 mOhms | 2.35 V | 8.1 nC | |||||
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12,000
In-stock
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IR / Infineon | MOSFET MOSFT DUAL PCh -9.2A 16.3mOhm -4.5V capbl | 20 V | SMD/SMT | SO-8 | Reel | 2 Channel | Si | P-Channel | - 30 V | - 9.2 A | 13 mOhms | 19 nC | ||||||||
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1,617
In-stock
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IR / Infineon | MOSFET 30V 1 N-CH HEXFET 9mOhms 52nC | 20 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 30 V | 12.5 A | 13 mOhms | 1 V | 52 nC | Enhancement | ||||
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669
In-stock
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IR / Infineon | MOSFET 30V 1 N-CH HEXFET 10mOhms 9.5nC | 20 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 30 V | 13 A | 13 mOhms | 9.5 nC | Enhancement | |||||
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6
In-stock
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IR / Infineon | MOSFET 30V DUAL N-CH HEXFET 30V VGS MAX | 20 V | SMD/SMT | SO-8 | Tube | 2 Channel | Si | N-Channel | 30 V | 11 A | 13 mOhms | 14 nC |