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Package / Case :
Maximum Operating Temperature :
Packaging :
Transistor Polarity :
Vds - Drain-Source Breakdown Voltage :
Id - Continuous Drain Current :
Vgs th - Gate-Source Threshold Voltage :
Qg - Gate Charge :
3 products
IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Vgs - Gate-Source Voltage Mounting Style Package / Case Minimum Operating Temperature Maximum Operating Temperature Packaging Number of Channels Technology Transistor Polarity Vds - Drain-Source Breakdown Voltage Id - Continuous Drain Current Rds On - Drain-Source Resistance Vgs th - Gate-Source Threshold Voltage Qg - Gate Charge Channel Mode
DMP3010LK3Q-13
1+
$0.600
10+
$0.496
100+
$0.320
1000+
$0.256
2500+
$0.217
RFQ
2,806
In-stock
Diodes Incorporated MOSFET P-Ch Enh Mode FET 30V 20Vgs +/- 20 V SMD/SMT TO-252-3 - 55 C + 150 C Reel 1 Channel Si P-Channel - 30 V - 17 A 6.5 mOhms - 2.1 V 59.2 nC Enhancement
SPP80N06S-08
1+
$2.560
10+
$2.180
100+
$1.740
500+
$1.530
RFQ
404
In-stock
Infineon Technologies MOSFET N-Ch 55V 80A TO220-3 +/- 20 V Through Hole TO-220-3 - 55 C + 175 C Tube 1 Channel Si N-Channel 55 V 80 A 6.5 mOhms 2.1 V 187 nC Enhancement
SPP80N06S08AKSA1
1+
$2.560
10+
$2.180
100+
$1.740
500+
$1.530
VIEW
RFQ
Infineon Technologies MOSFET N-Ch 55V 80A TO220-3 +/- 20 V Through Hole TO-220-3 - 55 C + 175 C Tube 1 Channel Si N-Channel 55 V 80 A 6.5 mOhms 2.1 V 187 nC Enhancement
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