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4 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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2,517
In-stock
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Infineon Technologies | MOSFET N-Ch 200V 36A TDSON-8 OptiMOS 3 | 20 V | SMD/SMT | TDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 200 V | 36 A | 27 mOhms | 2 V | 29 nC | Enhancement | OptiMOS | ||||
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2,641
In-stock
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Diodes Incorporated | MOSFET N-Ch 24Vds 12Vgs 6.0A Enh FET 2564pF | 12 V | SMD/SMT | X1-WLB1818-4 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 24 V | 6 A | 27 mOhms | 1.3 V | 29 nC | Enhancement | |||||
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23,500
In-stock
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Infineon Technologies | MOSFET N-Ch 200V 34A DPAK-2 OptiMOS 3 | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 200 V | 34 A | 27 mOhms | 2 V | 29 nC | Enhancement | |||||
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VIEW | Infineon Technologies | MOSFET N-Ch 200V 34A DPAK-2 OptiMOS 3 | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 200 V | 34 A | 27 mOhms | 2 V | 29 nC | Enhancement | OptiMOS |