- Mounting Style :
- Maximum Operating Temperature :
- Number of Channels :
- Transistor Polarity :
- Vds - Drain-Source Breakdown Voltage :
- Qg - Gate Charge :
- Tradename :
- Applied Filters :
16 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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3,583
In-stock
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Fairchild Semiconductor | MOSFET 100V N-Channel PowerTrench MOSFET | SMD/SMT | Power-33-8 | + 150 C | Reel | 1 Channel | Si | N-Channel | 100 V | 16 A | 56 mOhms | 3 nC, 5.2 nC | PowerTrench | |||||||
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5,000
In-stock
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Infineon Technologies | MOSFET 150V 1 N-CH HEXFET 56mOhms 60nC | 30 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 150 V | 33 A | 56 mOhms | 5.5 V | 60 nC | Enhancement | ||||
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641
In-stock
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Fairchild Semiconductor | MOSFET 200V N-CH MOSFET | 30 V | Through Hole | TO-220FP-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 200 V | 39 A | 56 mOhms | Enhancement | ||||||
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2,670
In-stock
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Fairchild Semiconductor | MOSFET 500V NCH MOSFET | 30 V | Through Hole | TO-3PN-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 300 V | 59 A | 56 mOhms | Enhancement | ||||||
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265
In-stock
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Infineon Technologies | MOSFET 300V, 40A, 69 mOhm 83 nC Qg, TO-220AB | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 300 V | 38 A | 56 mOhms | 5 V | 125 nC | Enhancement | ||||
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65
In-stock
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IXYS | MOSFET 600V 110A 0.056Ohm PolarP3 Power MOSFET | 30 V | Through Hole | PLUS-264-3 | Tube | 1 Channel | Si | N-Channel | 600 V | 110 A | 56 mOhms | 5 V | 245 nC | HyperFET | ||||||
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GET PRICE |
8,700
In-stock
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STMicroelectronics | MOSFET N-Ch 650 V 0.056 Ohm 42 A Mdmesh | 25 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 650 V | 42 A | 56 mOhms | 4 V | 98 nC | Enhancement | MDmesh | ||
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1,400
In-stock
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IR / Infineon | MOSFET MOSFT DUAL NCh 55V 4.7A | 20 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel | 55 V | 4.7 A | 56 mOhms | 1 V | 24 nC | |||||
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22
In-stock
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IXYS | MOSFET 600V 90A 0.056Ohm PolarP3 Power MOSFET | 30 V | Chassis Mount | SOT-227-4 | Tube | 1 Channel | Si | N-Channel | 600 V | 90 A | 56 mOhms | 5 V | 245 nC | HyperFET | ||||||
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152
In-stock
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Infineon Technologies | MOSFET Auto Q101 300V SGL N-CH HEXFET | 20 V | Through Hole | TO-247-3 | Tube | 1 Channel | Si | N-Channel | 300 V | 38 A | 56 mOhms | 5 V | 83 nC | |||||||
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4,789
In-stock
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onsemi | MOSFET -20V -4.9A P-Channel | 12 V | SMD/SMT | ChipFET-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 20 V | - 4.9 A | 56 mOhms | Enhancement | ||||||
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5,609
In-stock
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Toshiba | MOSFET N-Ch U-MOSVI FET ID 6A 30VDSS 340pF | 20 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 6 A | 56 mOhms | 1.3 V to 2.5 V | 2.7 nC | |||||
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1,950
In-stock
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IR / Infineon | MOSFET MOSFT 150V 33A 56mOhm 60nC | 30 V | SMD/SMT | TO-252-3 | - 55 C | Reel | 1 Channel | Si | N-Channel | 150 V | 33 A | 56 mOhms | 60 nC | Enhancement | ||||||
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4,465
In-stock
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onsemi | MOSFET SWITCHING DEVICE | 10 V | SMD/SMT | SOT-363-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 30 V | - 4.5 A | 56 mOhms | |||||||
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3
In-stock
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IR / Infineon | MOSFET 150V 1 N-CH HEXFET 56mOhms 60nC | 30 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 150 V | 33 A | 56 mOhms | 60 nC | Enhancement | |||||
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VIEW | Texas instruments | MOSFET PCh NexFET Pwr MOSFET | 8 V | SMD/SMT | DSBGA-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 20 V | - 3 A | 56 mOhms | NexFET |
