- Mounting Style :
- Maximum Operating Temperature :
- Transistor Polarity :
- Vds - Drain-Source Breakdown Voltage :
- Vgs th - Gate-Source Threshold Voltage :
- Qg - Gate Charge :
- Tradename :
- Applied Filters :
33 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Qualification | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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3,349
In-stock
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Fairchild Semiconductor | MOSFET SO-8 N-CH 80V | 20 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 80 V | 6.5 A | 32 mOhms | Enhancement | PowerTrench | ||||||
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3,669
In-stock
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STMicroelectronics | MOSFET P-Ch 30 Volt 24 Amp | 16 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | P-Channel | - 30 V | - 24 A | 32 mOhms | Enhancement | |||||||
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2,460
In-stock
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Fairchild Semiconductor | MOSFET 100V NCh PowerTrench | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 100 V | 25 A | 32 mOhms | 4 V | 53 nC | Enhancement | PowerTrench | ||||
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3,341
In-stock
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STMicroelectronics | MOSFET N-Ch 60 Volt 24 Amp | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 60 V | 24 A | 32 mOhms | Enhancement | |||||||
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4,081
In-stock
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onsemi | MOSFET 24A 60V N-Channel | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 60 V | 24 A | 32 mOhms | Enhancement | |||||||
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2,195
In-stock
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Fairchild Semiconductor | MOSFET 20V N-Ch PowerTrench | 8 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 20 V | 21 A | 32 mOhms | Enhancement | PowerTrench | ||||||
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781
In-stock
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Fairchild Semiconductor | MOSFET 150V N-Ch UltraFET Trench | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 150 V | 37 A | 32 mOhms | Enhancement | PowerTrench | ||||||
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GET PRICE |
58,200
In-stock
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Infineon Technologies | MOSFET MOSFT 150V 60A 32mOhm 60nC | 30 V | Through Hole | TO-220-3 | Tube | 1 Channel | Si | N-Channel | 150 V | 60 A | 32 mOhms | 60 nC | ||||||||
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1,241
In-stock
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Infineon Technologies | MOSFET MOSFT 150V 34A 41mOhm 26nC Qg | 20 V | Through Hole | TO-220-3 | Tube | 1 Channel | Si | N-Channel | 150 V | 35 A | 32 mOhms | 26 nC | |||||||||
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948
In-stock
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Fairchild Semiconductor | MOSFET 100V N-Channel Pwr Trench | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 100 V | 32 A | 32 mOhms | Enhancement | PowerTrench | ||||||
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1,170
In-stock
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STMicroelectronics | MOSFET N-Ch 60 Volt 30 Amp | 18 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 60 V | 30 A | 32 mOhms | Enhancement | |||||||
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GET PRICE |
48,100
In-stock
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Infineon Technologies | MOSFET Audio MOSFT 150V 34A 41mOhm 26nC | 20 V | Through Hole | TO-220-3 | Tube | 1 Channel | Si | N-Channel | 150 V | 35 A | 32 mOhms | 26 nC | ||||||||
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580
In-stock
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Fairchild Semiconductor | MOSFET 150V N-Ch UltraFET Trench | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 150 V | 37 A | 32 mOhms | Enhancement | PowerTrench | ||||||
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186
In-stock
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Fairchild Semiconductor | MOSFET 200V N-Channel QFET | 30 V | Through Hole | TO-3PN-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 200 V | 65 A | 32 mOhms | Enhancement | QFET | ||||||
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318
In-stock
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IXYS | MOSFET Trench POWER MOSFETs 200v, 60A | 20 V | Through Hole | TO-220-3 | + 175 C | Tube | 1 Channel | Si | N-Channel | 200 V | 60 A | 32 mOhms | |||||||||
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272
In-stock
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Infineon Technologies | MOSFET 150V 1 N-CH HEXFET 32mOhms 60nC | 30 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 150 V | 60 A | 32 mOhms | 60 nC | Enhancement | ||||||
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29
In-stock
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IXYS | MOSFET | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 100 V | 64 A | 32 mOhms | 2.5 V | 100 nC | Enhancement | |||||
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169
In-stock
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IR / Infineon | MOSFET MOSFT 150V 60A 32mOhm 60nC | 30 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 150 V | 60 A | 32 mOhms | 60 nC | Enhancement | ||||||
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70
In-stock
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IXYS | MOSFET | 20 V | Through Hole | TO-247-3 | - 55 C | + 150 C | 1 Channel | Si | N-Channel | 100 V | 64 A | 32 mOhms | 2.5 V | 100 nC | Enhancement | LinearL2 | |||||
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3,813
In-stock
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Diodes Incorporated | MOSFET MOSFET N-CHANNEL SOT-26 | 20 V | SMD/SMT | SOT-26-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 5.3 A | 32 mOhms | 9.2 nC | |||||||
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250
In-stock
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IR / Infineon | MOSFET 150V 1 N-CH HEXFET 32mOhms 60nC | 30 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 150 V | 44 A | 32 mOhms | 60 nC | Enhancement | ||||||
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2,563
In-stock
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Nexperia | MOSFET P-CH -20 V -5.7 A | SMD/SMT | TSOP-6 | Reel | 1 Channel | Si | P-Channel | - 20 V | - 5.7 A | 32 mOhms | 31 nC | ||||||||||
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238
In-stock
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Diodes Incorporated | MOSFET 12V P-Ch Enh Mode 19Vgs 2712pF 28.6nC | 8 V | SMD/SMT | U-DFN2020-F-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 12 V | - 6.6 A | 32 mOhms | - 0.8 V | 48.3 nC | Enhancement | |||||
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5,552
In-stock
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Toshiba | MOSFET Small Signal MOSFET V=30V, I-10A | - 25 V / + 20 V | SMD/SMT | UDFN6B-6 | Reel | 1 Channel | Si | P-Channel | - 30 V | - 10 A | 32 mOhms | - 2.2 V | 13.6 nC | ||||||||
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1,016
In-stock
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Fairchild Semiconductor | MOSFET N-Channel PwrTrench | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 100 V | 32 A | 32 mOhms | Enhancement | |||||||
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547
In-stock
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STMicroelectronics | MOSFET N-CH 60V 0.032 Ohm 24A STripFET II | 18 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 60 V | 24 A | 32 mOhms | Enhancement | |||||||
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3,000
In-stock
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IR / Infineon | MOSFET MOSFT 100V 59A 25mOhm 76nC | 30 V | Through Hole | TO-220-3 | Tube | 1 Channel | Si | N-Channel | 100 V | 59 A | 32 mOhms | 76 nC | |||||||||
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2,970
In-stock
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Infineon Technologies | MOSFET 150V 1 N-CH HEXFET 32mOhms 95nC | 30 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 150 V | 60 A | 32 mOhms | 95 nC | Enhancement | ||||||
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VIEW | STMicroelectronics | MOSFET N-Ch 120 Volt 40 Amp | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 120 V | 40 A | 32 mOhms | Enhancement | |||||||
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899
In-stock
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Toshiba | MOSFET N-Ch 30V FET 6A 2.2W 640pF | VS6-6 | Reel | 1 Channel | Si | N-Channel | 30 V | 6 A | 32 mOhms |
