- Mounting Style :
- Minimum Operating Temperature :
- Maximum Operating Temperature :
- Number of Channels :
- Transistor Polarity :
- Vds - Drain-Source Breakdown Voltage :
- Id - Continuous Drain Current :
- Vgs th - Gate-Source Threshold Voltage :
- Qg - Gate Charge :
- Tradename :
- Applied Filters :
26 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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10,003
In-stock
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Fairchild Semiconductor | MOSFET SOT-223 N-CH 30V | 8 V | SMD/SMT | SOT-223-4 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 6.3 A | 38 mOhms | Enhancement | ||||||
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6,247
In-stock
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Fairchild Semiconductor | MOSFET SO8 DUAL NCH LOGIC level POWER TRENCH | 20 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel | 30 V | 5.5 A | 38 mOhms | Enhancement | PowerTrench | |||||
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2,822
In-stock
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Fairchild Semiconductor | MOSFET P-Channel FET Enhancement Mode | 20 V | SMD/SMT | SOT-223-4 | - 65 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 30 V | - 5.9 A | 38 mOhms | Enhancement | ||||||
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1,039
In-stock
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Fairchild Semiconductor | MOSFET 250V NCHAN PwrTrench | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 250 V | 50 A | 38 mOhms | PowerTrench | |||||||
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2,156
In-stock
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STMicroelectronics | MOSFET N Ch 100V 0.033 Ohm 25A | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 100 V | 25 A | 38 mOhms | Enhancement | ||||||
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2,742
In-stock
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Fairchild Semiconductor | MOSFET SO-8 N-CH 30V | 20 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 6.5 A | 38 mOhms | Enhancement | PowerTrench | |||||
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2,007
In-stock
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STMicroelectronics | MOSFET N-Ch 100 Volt 35 Amp | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 100 V | 35 A | 38 mOhms | Enhancement | ||||||
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15,260
In-stock
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STMicroelectronics | MOSFET N-Ch 100 Volt 35 Amp | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 100 V | 35 A | 38 mOhms | Enhancement | ||||||
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5,011
In-stock
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STMicroelectronics | MOSFET N-Ch 30 Volt 17 Amp | 16 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 30 V | 17 A | 38 mOhms | Enhancement | ||||||
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6,231
In-stock
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onsemi | MOSFET PFET SOT23 20V 2.9A 38MOH | 8 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 20 V | - 5.5 A | 38 mOhms | - 0.65 V | 17.6 nC | |||||
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2,447
In-stock
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Diodes Incorporated | MOSFET MOSFET,P-CHANNEL -40V, -4.1A,-5.2A | 20 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Reel | 2 Channel | Si | P-Channel | - 40 V | - 4 A | 38 mOhms | 6.9 nC | ||||||
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2,868
In-stock
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Diodes Incorporated | MOSFET MOSFET,P-CHANNEL -40V, -4.7A,-6.0A | 20 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 40 V | - 4.4 A | 38 mOhms | 6.9 nC | ||||||
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1,300
In-stock
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Diodes Incorporated | MOSFET 20V N-Ch Enh Mode FET 12V 8Vgss 0.9W | 8 V | SMD/SMT | U-WLB1010-4 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 12 V | 4.8 A | 38 mOhms | 0.8 V | 3.2 nC | Enhancement | ||||
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100
In-stock
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IXYS | MOSFET 650V/80A Ultra Junction X2-Class | 30 V | Through Hole | TO-264-3 | - 55 C | + 150 C | Tube | Si | N-Channel | 650 V | 80 A | 38 mOhms | 2.7 V | 140 nC | Enhancement | HiPerFET | ||||
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4,247
In-stock
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Diodes Incorporated | MOSFET 20V P-CH MOSFET | 10 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 20 V | - 4.3 A | 38 mOhms | - 1.4 V | 9.1 nC | Enhancement | ||||
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2,434
In-stock
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onsemi | MOSFET SWITCHING DEVICE | SMD/SMT | ECH-8 | Reel | 1 Channel | Si | P-Channel | - 20 V | - 5 A | 38 mOhms | ||||||||||
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91,000
In-stock
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Infineon Technologies | MOSFET N-Ch 100V 18A TSDSON-8 OptiMOS 3 | 20 V | SMD/SMT | TSDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 100 V | 18 A | 38 mOhms | 2 V | 9.1 nC | Enhancement | OptiMOS | |||
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2,646
In-stock
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onsemi | MOSFET NCH 1.8V DRIVESERIES | 12 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 4 A | 38 mOhms | 400 mV | 4.7 nC | Enhancement | ||||
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2,324
In-stock
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Texas instruments | MOSFET Dual 30V N-CH NexFET Pwr MOSFETs | 10 V | SMD/SMT | VSON-8 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel | 30 V | 27 A | 38 mOhms | 1 V | 6.3 nC | NexFET | ||||
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15
In-stock
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Microsemi | MOSFET Power MOSFET - MOS5 | 30 V | SMD/SMT | D3PAK-3 | - 55 C | + 150 C | Si | N-Channel | 200 V | 67 A | 38 mOhms | 4 V | 148 nC | Enhancement | Power MOS V | |||||
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30
In-stock
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Microsemi | MOSFET Power MOSFET - MOS5 | 30 V | Through Hole | TO-247-3 | - 55 C | + 150 C | 1 Channel | Si | N-Channel | 200 V | 67 A | 38 mOhms | 2 V | 225 nC | Enhancement | |||||
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9,730
In-stock
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Infineon Technologies | MOSFET N-Ch 100V 18A TSDSON-8 OptiMOS 3 | 20 V | SMD/SMT | TSDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 100 V | 18 A | 38 mOhms | 2 V | 9.1 nC | Enhancement | OptiMOS | |||
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6,000
In-stock
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onsemi | MOSFET NCH 1.8V DRIVE SERIES | 12 V | SMD/SMT | SOT-363-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 20 V | 5.5 A | 38 mOhms | |||||||
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1,182
In-stock
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Toshiba | MOSFET N-Ch 20V FET 6A 2.2W 630pF | VS6-6 | Reel | 1 Channel | Si | N-Channel | 20 V | 6 A | 38 mOhms | |||||||||||
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VIEW | Toshiba | MOSFET Vds=-12V Id=-4A 6Pin | 8 V | SMD/SMT | ES6-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 12 V | - 4 A | 38 mOhms | Enhancement | ||||||
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12
In-stock
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Microsemi | MOSFET Power FREDFET - MOS5 | 30 V | SMD/SMT | D3PAK-3 | - 55 C | + 150 C | Si | N-Channel | 200 V | 67 A | 38 mOhms | 4 V | 148 nC | Enhancement |
