- Mounting Style :
- Package / Case :
- Maximum Operating Temperature :
- Qg - Gate Charge :
15 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
21,735
In-stock
|
Infineon Technologies | MOSFET N-Ch 100V 50A DPAK-2 OptiMOS-T | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 100 V | 50 A | 15 mOhms | Enhancement | OptiMOS | ||||||
|
4,300
In-stock
|
STMicroelectronics | MOSFET N-Ch, 100V-0.015ohms 60A | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 100 V | 60 A | 15 mOhms | Enhancement | |||||||
|
1,191
In-stock
|
Fairchild Semiconductor | MOSFET 100V N-Channel PowerTrench | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 100 V | 57 A | 15 mOhms | Enhancement | PowerTrench | ||||||
|
2,710
In-stock
|
STMicroelectronics | MOSFET N-Ch 100 Volt 80 Amp | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 100 V | 80 A | 15 mOhms | Enhancement | |||||||
|
1,019
In-stock
|
STMicroelectronics | MOSFET N-Ch 100 Volt 80 Amp | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 100 V | 80 A | 15 mOhms | Enhancement | |||||||
|
670
In-stock
|
STMicroelectronics | MOSFET N-Ch, 100V-0.015ohms 60A | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 100 V | 65 A | 15 mOhms | Enhancement | |||||||
|
60
In-stock
|
IXYS | MOSFET 110 Amps 100V 0.015 Rds | 20 V | Through Hole | TO-3P-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 100 V | 110 A | 15 mOhms | 5 V | 110 nC | Enhancement | PolarHT | ||||
|
36
In-stock
|
IR / Infineon | MOSFET MOSFT 100V 80A 15mOhm 81nC | 20 V | SMD/SMT | TO-252-3 | Reel | 1 Channel | Si | N-Channel | 100 V | 80 A | 15 mOhms | 81 nC | |||||||||
|
909
In-stock
|
IXYS | MOSFET 110 Amps 100V 0.015 Rds | 20 V | Through Hole | TO-247-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 100 V | 110 A | 15 mOhms | 5 V | 110 nC | Enhancement | PolarHT, HiPerFET | ||||
|
500
In-stock
|
Infineon Technologies | MOSFET MOSFT 100V 80A 15mOhm 81nC | 20 V | Through Hole | TO-220-3 | Tube | 1 Channel | Si | N-Channel | 100 V | 80 A | 15 mOhms | 81 nC | |||||||||
|
VIEW | Toshiba | MOSFET N-Ch MOS 40A 100V 147W 4000pF 0.015 | Through Hole | TO-220-3 | 1 Channel | Si | N-Channel | 100 V | 40 A | 15 mOhms | ||||||||||||
|
VIEW | IXYS | MOSFET 100V 80A | 20 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 100 V | 80 A | 15 mOhms | Enhancement | HyperFET | ||||||
|
VIEW | IXYS | MOSFET 80 Amps 100V 0.018 Rds | 20 V | SMD/SMT | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 100 V | 76 A | 15 mOhms | Enhancement | |||||||
|
VIEW | IXYS | MOSFET 80 Amps 100V 0.015 Rds | 20 V | SMD/SMT | TO-268-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 100 V | 80 A | 15 mOhms | Enhancement | HyperFET | ||||||
|
84
In-stock
|
IR / Infineon | MOSFET 100V N-CH HEXFET 15mOhms 81nC | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 100 V | 80 A | 15 mOhms | 81 nC | Enhancement |