- Maximum Operating Temperature :
- Number of Channels :
- Transistor Polarity :
- Vds - Drain-Source Breakdown Voltage :
- Id - Continuous Drain Current :
-
- - 10 A (2)
- - 4.2 A (1)
- - 4.3 A (1)
- - 4.5 A (1)
- - 5.5 A (2)
- - 6 A (1)
- - 6.5 A (1)
- - 6.8 A (1)
- - 7.9 A (1)
- - 8 A (1)
- 20 A (1)
- 25 A (2)
- 29 A (2)
- 32 A (1)
- 4 A (1)
- 4.8 A (1)
- 40 A (1)
- 47 A (2)
- 5 A (1)
- 5.07 A (1)
- 5.1 A (1)
- 5.7 A (2)
- 53 A (1)
- 6.2 A (1)
- 6.4 A (1)
- 6.4 A, 5.4 A (1)
- 6.5 A (1)
- 6.7 A (1)
- 6.8 A (2)
- 7 A (1)
- 7.5 A (1)
- 7.7 A (1)
- 7.9 A (2)
- 8.5 A (2)
- 82 A (1)
- 9.7 A (1)
- Vgs th - Gate-Source Threshold Voltage :
- Applied Filters :
45 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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GET PRICE |
306,500
In-stock
|
Nexperia | MOSFET PMV50EPEA/TO-236AB/REEL 7 | +/- 20 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 30 V | - 4.2 A | 35 mOhms | - 3 V | 19.2 nC | Enhancement | |||
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4,321,100
In-stock
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Nexperia | MOSFET 30V N-channel Trench MOSFET | 20 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 5.1 A | 35 mOhms | 1 V | 3.6 nC | Enhancement | ||||
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14,398
In-stock
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Fairchild Semiconductor | MOSFET P-Ch PowerTrench Specified 2.5V | 12 V | SMD/SMT | SSOT-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 20 V | - 5.5 A | 35 mOhms | Enhancement | PowerTrench | |||||
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4,031
In-stock
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Fairchild Semiconductor | MOSFET Single N-Channel Power Trench Mosfet | SMD/SMT | MicroFET-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 60 V | 7.5 A | 35 mOhms | 1.8 V | 12 nC | PowerTrench | |||||
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3,818
In-stock
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Fairchild Semiconductor | MOSFET SOT-223 N-CH 30V | 20 V | SMD/SMT | SOT-223-4 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 6.5 A | 35 mOhms | Enhancement | ||||||
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2,241
In-stock
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Fairchild Semiconductor | MOSFET PT5 100/20V Dual Nch Power Trench MOSFET | SMD/SMT | PQFN-12 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel | 100 V | 7 A | 35 mOhms | PowerTrench Power Clip | |||||||
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12,000
In-stock
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IR / Infineon | MOSFET HEXFET P-CH Low 0.020 Ohm -30V | 20 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 30 V | - 8 A | 35 mOhms | 40 nC | Enhancement | |||||
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GET PRICE |
4,784
In-stock
|
Infineon Technologies | MOSFET N-Ch 55V 20A TDSON-8 OptiMOS | 20 V | SMD/SMT | TDSON-8 | + 175 C | Reel | 2 Channel | Si | N-Channel | 55 V | 20 A | 35 mOhms | OptiMOS | ||||||
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2,261
In-stock
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STMicroelectronics | MOSFET Nchanl 100V 0027 Ohm typ 25 A Pwr MOSFET | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 100 V | 25 A | 35 mOhms | 4.5 V | 14 nC | |||||
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1,675
In-stock
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STMicroelectronics | MOSFET N-Ch 100 Volt 40 Amp | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 100 V | 40 A | 35 mOhms | Enhancement | ||||||
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5,118
In-stock
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Infineon Technologies | MOSFET MOSFT 20V 6.8A 35mOhm 14nC | 12 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 20 V | 6.8 A | 35 mOhms | 0.7 V | 14 nC | |||||
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32,120
In-stock
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IR / Infineon | MOSFET MOSFT PCh -30V -10A 20mOhm 61nC | 20 V | SMD/SMT | SO-8 | Reel | 1 Channel | Si | P-Channel | - 30 V | - 10 A | 35 mOhms | 61 nC | ||||||||
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1,174
In-stock
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Fairchild Semiconductor | MOSFET Single P-Ch FET Enhancement Mode | 8 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 20 V | - 6.5 A | 35 mOhms | Enhancement | ||||||
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3,450
In-stock
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onsemi | MOSFET NFET 20V 0.035R TR | 12 V | SMD/SMT | SOIC-8 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel | 20 V | 5.07 A | 35 mOhms | Enhancement | ||||||
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4,180
In-stock
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Infineon Technologies | MOSFET MOSFT 20V 5.7A 35mOhm 14nC Micro 8 | 12 V | SMD/SMT | Micro-8 | Reel | 1 Channel | Si | N-Channel | 20 V | 5.7 A | 35 mOhms | 14 nC | ||||||||
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2,541
In-stock
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Infineon Technologies | MOSFET MOSFT 30V 8.5A 22mOhm 38nC | 20 V | SMD/SMT | SO-8 | Reel | 1 Channel | Si | N-Channel | 30 V | 8.5 A | 35 mOhms | 38 nC | ||||||||
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3,311
In-stock
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Fairchild Semiconductor | MOSFET SSOT-6 N-CH 30V | 20 V | SMD/SMT | SSOT-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 5 A | 35 mOhms | Enhancement | ||||||
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782
In-stock
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Fairchild Semiconductor | MOSFET 60V, 29A, 35mOhm N-Channel Mosfet | 16 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 60 V | 29 A | 35 mOhms | 23.7 nC | Enhancement | |||||
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2,370
In-stock
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Infineon Technologies | MOSFET N-Ch 60V 29A DPAK-2 | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 60 V | 29 A | 35 mOhms | Enhancement | OptiMOS | |||||
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566
In-stock
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Infineon Technologies | MOSFET 55V 1 N-CH HEXFET 22mOhms 32nC | 16 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 55 V | 47 A | 35 mOhms | 32 nC | Enhancement | |||||
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5,334
In-stock
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Diodes Incorporated | MOSFET P-Ch -20V ENH Mode 35mOhm -4.5V -6.0A | 12 V | SMD/SMT | TSOT-26-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 20 V | - 6 A | 35 mOhms | - 1.5 V | 15.4 nC | Enhancement | ||||
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2,861
In-stock
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Diodes Incorporated | MOSFET MOSFET BVDSS: 31V-40 1V-40V SO-8 T&R 2.5K | 25 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 9.7 A | 35 mOhms | 2.1 V | 6 nC | Enhancement | ||||
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1,023
In-stock
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Infineon Technologies | MOSFET MOSFT 55V 47A 22mOhm 32nC Log Lvl | 16 V | SMD/SMT | TO-252-3 | Reel | 1 Channel | Si | N-Channel | 55 V | 47 A | 35 mOhms | 32 nC | ||||||||
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513
In-stock
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Diodes Incorporated | MOSFET N and P Channel | 20 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel, P-Channel | 30 V | 6.4 A | 35 mOhms | Enhancement | ||||||
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1,206
In-stock
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Diodes Incorporated | MOSFET Cmp 30V NP Ch UMOS | 20 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel, P-Channel | 30 V | 6.4 A, 5.4 A | 35 mOhms | Enhancement | ||||||
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888
In-stock
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Diodes Incorporated | MOSFET Dl 30V N-Chnl UMOS | 20 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel | 30 V | 6.2 A | 35 mOhms | Enhancement | ||||||
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883
In-stock
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Diodes Incorporated | MOSFET 30V N Chnl UMOS | 20 V | SMD/SMT | MSOP-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 6.7 A | 35 mOhms | 1 V | 26.8 nC | Enhancement | ||||
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2,985
In-stock
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Diodes Incorporated | MOSFET N-Ch Enh Mode FET 8Vdss 5Vgss 15A | 5 V | SMD/SMT | X1-WLB0808-4 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 8 V | 4 A | 35 mOhms | 350 mV | 15 nC | Enhancement | ||||
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45
In-stock
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IXYS | MOSFET 82 Amps 250V 0.035 Rds | 20 V | SMD/SMT | TO-268-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 250 V | 82 A | 35 mOhms | 5 V | 142 nC | Enhancement | PolarHT | |||
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603
In-stock
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Diodes Incorporated | MOSFET Dl 20V N-Chnl UMOS | 12 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel | 20 V | 7.7 A | 35 mOhms | Enhancement |
