- Number of Channels :
- Transistor Polarity :
- Vds - Drain-Source Breakdown Voltage :
- Id - Continuous Drain Current :
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14 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | |
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12,000
In-stock
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IR / Infineon | MOSFET HEXFET P-CH Low 0.020 Ohm -30V | 20 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 30 V | - 8 A | 35 mOhms | 40 nC | Enhancement | ||||
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5,118
In-stock
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Infineon Technologies | MOSFET MOSFT 20V 6.8A 35mOhm 14nC | 12 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 20 V | 6.8 A | 35 mOhms | 0.7 V | 14 nC | ||||
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32,120
In-stock
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IR / Infineon | MOSFET MOSFT PCh -30V -10A 20mOhm 61nC | 20 V | SMD/SMT | SO-8 | Reel | 1 Channel | Si | P-Channel | - 30 V | - 10 A | 35 mOhms | 61 nC | |||||||
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1,174
In-stock
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Fairchild Semiconductor | MOSFET Single P-Ch FET Enhancement Mode | 8 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 20 V | - 6.5 A | 35 mOhms | Enhancement | |||||
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2,541
In-stock
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Infineon Technologies | MOSFET MOSFT 30V 8.5A 22mOhm 38nC | 20 V | SMD/SMT | SO-8 | Reel | 1 Channel | Si | N-Channel | 30 V | 8.5 A | 35 mOhms | 38 nC | |||||||
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2,861
In-stock
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Diodes Incorporated | MOSFET MOSFET BVDSS: 31V-40 1V-40V SO-8 T&R 2.5K | 25 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 9.7 A | 35 mOhms | 2.1 V | 6 nC | Enhancement | |||
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513
In-stock
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Diodes Incorporated | MOSFET N and P Channel | 20 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel, P-Channel | 30 V | 6.4 A | 35 mOhms | Enhancement | |||||
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1,206
In-stock
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Diodes Incorporated | MOSFET Cmp 30V NP Ch UMOS | 20 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel, P-Channel | 30 V | 6.4 A, 5.4 A | 35 mOhms | Enhancement | |||||
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888
In-stock
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Diodes Incorporated | MOSFET Dl 30V N-Chnl UMOS | 20 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel | 30 V | 6.2 A | 35 mOhms | Enhancement | |||||
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603
In-stock
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Diodes Incorporated | MOSFET Dl 20V N-Chnl UMOS | 12 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel | 20 V | 7.7 A | 35 mOhms | Enhancement | |||||
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2,000
In-stock
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Diodes Incorporated | MOSFET 30V P-Chnl HDMOS | 20 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 30 V | - 7.9 A | 35 mOhms | Enhancement | |||||
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VIEW | IR / Infineon | MOSFET AUTO -30V 1 P-CH HEXFET 20mOhms | 20 V | SMD/SMT | SO-8 | Reel | 1 Channel | Si | P-Channel | - 30 V | - 10 A | 35 mOhms | 61 nC | |||||||
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640
In-stock
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IR / Infineon | MOSFET 30V 1 N-CH HEXFET 22mOhms 38nC | 20 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 30 V | 8.5 A | 35 mOhms | 38 nC | Enhancement | ||||
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73
In-stock
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IR / Infineon | MOSFET 20V 1 N-CH HEXFET 35mOhms 14nC | 12 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 20 V | 6.8 A | 35 mOhms | 0.7 V | 14 nC | Enhancement |
