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5 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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10,635
In-stock
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Texas instruments | MOSFET 40V N-Channel NexFET Power MOSFET | 20 V | SMD/SMT | VSONP-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 40 V | 100 A | 9.8 mOhms | 1.8 V | 16 nC | NexFET | ||||
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2,000
In-stock
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Toshiba | MOSFET N-ch 30V 50A DP | SMD/SMT | TO-252-3 | Reel | 1 Channel | Si | N-Channel | 30 V | 50 A | 9.8 mOhms | ||||||||||
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20,000
In-stock
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Infineon Technologies | MOSFET N-Ch 100V 60A DPAK-2 | 16 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 100 V | 60 A | 9.8 mOhms | 1.1 V | 49 nC | Enhancement | ||||
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2,500
In-stock
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Infineon Technologies | MOSFET N-Ch 100V 60A DPAK-2 | 16 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 100 V | 60 A | 9.8 mOhms | 1.1 V | 49 nC | Enhancement | ||||
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VIEW | Toshiba | MOSFET MOSFET N-CH 80V 28A | SOP-Advance-8 | Reel | 1 Channel | Si | N-Channel | 80 V | 28 A | 9.8 mOhms |
