- Manufacture :
- Mounting Style :
- Package / Case :
- Transistor Polarity :
- Vds - Drain-Source Breakdown Voltage :
- Id - Continuous Drain Current :
- Qg - Gate Charge :
- Applied Filters :
7 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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740
In-stock
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STMicroelectronics | MOSFET N-Ch 500 Volt 10 Amp Zener SuperMESH | 30 V | SMD/SMT | TO-263-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 500 V | 10 A | 480 mOhms | 49 nC | Enhancement | |||||
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895
In-stock
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STMicroelectronics | MOSFET N-Ch 650V 0.43 Ohm 9A MDmesh M5 MOS | SMD/SMT | TO-252-3 | Reel | Si | N-Channel | 650 V | 9 A | 480 mOhms | |||||||||||
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152,000
In-stock
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Infineon Technologies | MOSFET 20V -100V P-CH FET 480mOhms 18nC | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 100 V | - 6.5 A | 480 mOhms | 18 nC | Enhancement | |||||
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5
In-stock
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Microsemi | MOSFET Power FREDFET - MOS8 | 30 V | Through Hole | TO-264-3 | - 55 C | + 150 C | Reel | Si | N-Channel | 1200 V | 27 A | 480 mOhms | 4 V | 300 nC | Enhancement | POWER MOS 8 | ||||
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30,000
In-stock
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Infineon Technologies | MOSFET MOSFT PCh -6.5A 480mOhm 18nC | 20 V | SMD/SMT | TO-252-3 | Reel | 1 Channel | Si | P-Channel | - 100 V | - 6.5 A | 480 mOhms | 18 nC | ||||||||
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2,500
In-stock
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STMicroelectronics | MOSFET N-Channel 650V Power MDmesh | 25 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 650 V | 9 A | 480 mOhms | Enhancement | ||||||
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858
In-stock
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STMicroelectronics | MOSFET N-Ch 650V 0.43 Ohm 9A MDmeshM5 710V | SMD/SMT | TO-263-3 | Reel | 1 Channel | Si | N-Channel | 650 V | 9 A | 480 mOhms |
