- Package / Case :
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- Vgs th - Gate-Source Threshold Voltage :
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6 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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35,820
In-stock
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Infineon Technologies | MOSFET N-Ch 100V 70A DPAK-2 OptiMOS-T | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 100 V | 70 A | 11.1 mOhms | Enhancement | OptiMOS | ||||||
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2,258
In-stock
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IR / Infineon | MOSFET MOSFT 55V 51A 13.9mOhm 29nC | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 55 V | 51 A | 11.1 mOhms | 4 V | 29 nC | ||||||
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2,656
In-stock
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Fairchild Semiconductor | MOSFET 30V NCh PowerTrench MOSFET | 20 V | SMD/SMT | Power-56-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 44 A | 11.1 mOhms | 3 V | 7 nC | PowerTrench | |||||
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2,497
In-stock
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Toshiba | MOSFET N-Ch 30V FET 15A 1.9W 1800pF | SMD/SMT | SOP-8 | Reel | 1 Channel | Si | N-Channel | 30 V | 15 A | 11.1 mOhms | |||||||||||
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VIEW | Toshiba | MOSFET MOSFET | SOP-8 | Reel | 1 Channel | Si | N-Channel | 30 V | 13 A | 11.1 mOhms | ||||||||||||
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63
In-stock
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IR / Infineon | MOSFET 100V 63A 13.9mOhm HEXFET 143W 54nC | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 100 V | 63 A | 11.1 mOhms | 2 V to 4 V | 54 nC | Enhancement | StrongIRFET |