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- Qg - Gate Charge :
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20 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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1,175
In-stock
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Fairchild Semiconductor | MOSFET PQFN88 PKG, 199mohm, 600V, SuperFET2 | 20 V | SMD/SMT | Power-88-4 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 600 V | 12 A | 299 mOhms | 3.5 V | 39 nC | SuperFET II | ||||
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869
In-stock
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STMicroelectronics | MOSFET N-Ch 900V 0.25 Ohm 18.5A MDmesh K5 | 30 V | SMD/SMT | TO-263-3 | - 55 C | + 150 C | Reel | Si | N-Channel | 900 V | 18.5 A | 299 mOhms | 43 nC | |||||||
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501
In-stock
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STMicroelectronics | MOSFET N-Ch 900V 0.25 Ohm 18.5A MDmesh K5 | 30 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | Si | N-Channel | 900 V | 18.5 A | 299 mOhms | 43 nC | |||||||
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883
In-stock
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STMicroelectronics | MOSFET N-Ch 900V 0.25 Ohm 18.5A MDmesh K5 | 30 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 900 V | 18.5 A | 299 mOhms | 43 nC | ||||||
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1,930
In-stock
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Infineon Technologies | MOSFET N-Ch 650V 11.1A ThinPAK-4 CoolMOS CP | VSON-4 | Reel | 1 Channel | Si | N-Channel | 600 V | 34 A | 299 mOhms | CoolMOS | ||||||||||
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865
In-stock
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STMicroelectronics | MOSFET N-Ch 900V 0.25 Ohm 18.5A MDmesh K5 | 30 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 900 V | 18.5 A | 299 mOhms | 43 nC | ||||||
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4,590
In-stock
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Fairchild Semiconductor | MOSFET Int. NCh PowerTrench MOSFET & Sch. Diode | 12 V | SMD/SMT | MicroFET-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 1.6 A | 299 mOhms | Enhancement | PowerTrench | |||||
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GET PRICE |
37,900
In-stock
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STMicroelectronics | MOSFET N-Ch 650 Volt 12 Amp | 25 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 650 V | 12 A | 299 mOhms | Enhancement | |||||
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900
In-stock
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Infineon Technologies | MOSFET N-Ch 550V 12A D2PAK-2 CoolMOS CP | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 550 V | 12 A | 299 mOhms | Enhancement | CoolMOS | |||||
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GET PRICE |
2,000
In-stock
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Infineon Technologies | MOSFET N-Ch 500V 12A TO220FP-3 CoolMOS CP | 20 V | Through Hole | TO-220FP-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 500 V | 12 A | 299 mOhms | 23 nC | Enhancement | CoolMOS | |||
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113
In-stock
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Infineon Technologies | MOSFET N-Ch 650V 11A TO247-3 CoolMOS CP | 20 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 11 A | 299 mOhms | Enhancement | CoolMOS | |||||
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6,877
In-stock
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onsemi | MOSFET 25V 1.2A N-Channel | 8 V | SMD/SMT | SC-88-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 25 V | 1.2 A | 299 mOhms | Enhancement | ||||||
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230
In-stock
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Infineon Technologies | MOSFET N-Ch 500V 12A TO247-3 CoolMOS CP | 20 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 500 V | 12 A | 299 mOhms | Enhancement | CoolMOS | |||||
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2,000
In-stock
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STMicroelectronics | MOSFET | 25 V | Through Hole | TO-220FP-3 | - 55 C | + 150 C | 1 Channel | Si | N-Channel | 500 V | 11 A | 299 mOhms | 4 V | 120 nC | Enhancement | |||||
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40
In-stock
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Infineon Technologies | MOSFET N-Ch 500V 12A TO220-3 CoolMOS CP | 20 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 500 V | 12 A | 299 mOhms | Enhancement | CoolMOS | |||||
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1,000
In-stock
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STMicroelectronics | MOSFET N-channel 600V, 14A FDMesh II | 25 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 14 A | 299 mOhms | Enhancement | ||||||
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VIEW | STMicroelectronics | MOSFET N-Ch, 600V-0.27ohms FDMesh 14A | 25 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 14 A | 299 mOhms | Enhancement | ||||||
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64
In-stock
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STMicroelectronics | MOSFET N-channel 600V, 14A FDMesh II | 25 V | SMD/SMT | TO-263-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 600 V | 14 A | 299 mOhms | Enhancement | ||||||
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VIEW | STMicroelectronics | MOSFET N-channel 600 V FDMesh | 25 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 14 A | 299 mOhms | Enhancement | ||||||
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129
In-stock
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Infineon Technologies | MOSFET N-Ch 500V 12A TO220-3 | 20 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 500 V | 12 A | 299 mOhms | 3 V | 23 nC | CoolMOS |
