- Mounting Style :
- Package / Case :
- Qg - Gate Charge :
6 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Qg - Gate Charge | Channel Mode | Tradename | |
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466
In-stock
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Infineon Technologies | MOSFET N-Ch 550V 7.1A TO220-3 | 20 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 500 V | 7.1 A | 520 mOhms | 13 nC | CoolMOS | ||||
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176
In-stock
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Infineon Technologies | MOSFET N-Ch 500V 7A TO220FP-3 CoolMOS CP | 20 V | Through Hole | TO-220FP-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 500 V | 7.1 A | 520 mOhms | 13 nC | Enhancement | CoolMOS | |||
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1,185
In-stock
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Infineon Technologies | MOSFET N-Ch 500V 7.1A IPAK-3 CoolMOS CP | 20 V | Through Hole | TO-251-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 500 V | 7.1 A | 520 mOhms | Enhancement | CoolMOS | ||||
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1,160
In-stock
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Infineon Technologies | MOSFET N-Ch 600V 8.1A DPAK-2 CoolMOS C6 | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 600 V | 8.1 A | 520 mOhms | 23.4 nC | Enhancement | CoolMOS | |||
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803
In-stock
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Infineon Technologies | MOSFET N-Ch 550V 7.1A DPAK-2 CoolMOS CP | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 500 V | 7.1 A | 520 mOhms | Enhancement | CoolMOS | ||||
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167
In-stock
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Infineon Technologies | MOSFET N-Ch 600V 6.8A D2PAK-2 CoolMOS CP | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 150 C | Reel | 1 Channel | GaN | N-Channel | 600 V | 6.8 A | 520 mOhms | Enhancement | CoolMOS |
