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5 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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1,156
In-stock
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Diodes Incorporated | MOSFET 60V LO INPT CURR SELF PROT LO SD SWCH | - | SMD/SMT | SOT-223-3 | - 40 C | + 125 C | Reel | 1 Channel | Si | N-Channel | 60 V | 1.1 A | 520 mOhms | 1 V | - | Enhancement | IntelliFET | |||
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12
In-stock
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IXYS | MOSFET 20 Amps 800V 0.52 Rds | 30 V | SMD/SMT | TO-268-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 800 V | 20 A | 520 mOhms | 5 V | 86 nC | Enhancement | PolarHV, HiPerFET | |||
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1,160
In-stock
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Infineon Technologies | MOSFET N-Ch 600V 8.1A DPAK-2 CoolMOS C6 | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 600 V | 8.1 A | 520 mOhms | 23.4 nC | Enhancement | CoolMOS | ||||
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803
In-stock
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Infineon Technologies | MOSFET N-Ch 550V 7.1A DPAK-2 CoolMOS CP | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 500 V | 7.1 A | 520 mOhms | Enhancement | CoolMOS | |||||
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167
In-stock
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Infineon Technologies | MOSFET N-Ch 600V 6.8A D2PAK-2 CoolMOS CP | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 150 C | Reel | 1 Channel | GaN | N-Channel | 600 V | 6.8 A | 520 mOhms | Enhancement | CoolMOS |
