- Mounting Style :
- Minimum Operating Temperature :
- Maximum Operating Temperature :
- Number of Channels :
- Transistor Polarity :
- Vgs th - Gate-Source Threshold Voltage :
- Qg - Gate Charge :
- Applied Filters :
25 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
27,186
In-stock
|
Nexperia | MOSFET 30V N-channel Trench MOSFET | 20 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 7.6 A | 34 mOhms | 1 V | 7.2 nC | Enhancement | ||||
|
|
955
In-stock
|
STMicroelectronics | MOSFET Low charge STripFET | 20 V | Through Hole | TO-220-3 | - 50 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 200 V | 75 A | 34 mOhms | Enhancement | ||||||
|
|
3,282
In-stock
|
IR / Infineon | MOSFET MOSFT 150V 5A 44mOhm 25nC Qg | 20 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 150 V | 5.1 A | 34 mOhms | 4 V | 25 nC | |||||
|
|
7,579
In-stock
|
onsemi | MOSFET NFET SO8 40V | SMD/SMT | SOIC-8 | Reel | 2 Channel | Si | N-Channel | 40 V | 5.8 A | 34 mOhms | ||||||||||
|
|
2,750
In-stock
|
Fairchild Semiconductor | MOSFET N-Channel Power Trench MOSFET | 20 V | SMD/SMT | Power-56-8 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 60 V | 17.6 A | 34 mOhms | 1.9 V | 17 nC | UltraFET | ||||
|
|
GET PRICE |
124,700
In-stock
|
onsemi | MOSFET NChan Sngle 150V 16A PowerTrench MOSFET | 20 V | SMD/SMT | Power-33-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 150 V | 16 A | 34 mOhms | 2.7 V | 15 nC | PowerTrench Power Clip | |||
|
|
21,370
In-stock
|
IR / Infineon | MOSFET MOSFT 150V 33A 42mOhm 26nC Qg | 20 V | SMD/SMT | TO-252-3 | Reel | 1 Channel | Si | N-Channel | 150 V | 33 A | 34 mOhms | 26 nC | ||||||||
|
|
572
In-stock
|
STMicroelectronics | MOSFET Low charge STripFET | 20 V | SMD/SMT | TO-263-3 | - 50 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 200 V | 75 A | 34 mOhms | Enhancement | ||||||
|
|
187
In-stock
|
Infineon Technologies | MOSFET HIGH POWER_NEW | 20 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 50 A | 34 mOhms | 3 V | 107 nC | Enhancement | CoolMOS | |||
|
|
2,489
In-stock
|
IR / Infineon | MOSFET MOSFT 100V 31A 39mOhm 37nC | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 100 V | 31 A | 34 mOhms | 4 V | 37 nC | |||||
|
|
590
In-stock
|
STMicroelectronics | MOSFET Low charge STripFET | 20 V | Through Hole | TO-247-3 | - 50 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 200 V | 75 A | 34 mOhms | Enhancement | ||||||
|
|
3,134
In-stock
|
Diodes Incorporated | MOSFET MOSFET,N-CHANNEL 40V, 5.5A/- 7.2A | 20 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 40 V | 5.4 A | 34 mOhms | 4.9 nC | ||||||
|
|
1,638
In-stock
|
Diodes Incorporated | MOSFET MOSFET,N-CHANNEL 40V, 4.8A/- 6.3A | 20 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel | 40 V | 4.8 A | 34 mOhms | 4.9 nC | ||||||
|
|
1,318
In-stock
|
Fairchild Semiconductor | MOSFET 35A 55V N-Channel UltraFET | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 55 V | 35 A | 34 mOhms | Enhancement | UltraFET | |||||
|
|
858
In-stock
|
Infineon Technologies | MOSFET 150V 1 N-CH HEXFET 42mOhms 26nC | 20 V | SMD/SMT | TO-252-3 | Tube | 1 Channel | Si | N-Channel | 150 V | 33 A | 34 mOhms | 26 nC | ||||||||
|
|
738
In-stock
|
Infineon Technologies | MOSFET MOSFT 150V 33A 42mOhm 26nC | 20 V | Through Hole | TO-251-3 | Tube | Si | N-Channel | 150 V | 33 A | 34 mOhms | 26 nC | |||||||||
|
|
4,995
In-stock
|
Nexperia | MOSFET 20V 5 A P-CH TRENCH MOSFET | SMD/SMT | TSOP-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 20 V | - 5 A | 34 mOhms | - 0.7 V | 15.5 nC | Enhancement | |||||
|
|
56
In-stock
|
IXYS | MOSFET 74 Amps 200V 0.034 Rds | 20 V | Through Hole | TO-247-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 200 V | 74 A | 34 mOhms | 5 V | 107 nC | Enhancement | PolarHT, HiPerFET | |||
|
|
60
In-stock
|
Fairchild Semiconductor | MOSFET 100V N-Channel PowerTrench MOSFET | SMD/SMT | Power-56-8 | + 150 C | Reel | 1 Channel | Si | N-Channel | 100 V | 6 A | 34 mOhms | PowerTrench | ||||||||
|
|
40
In-stock
|
IXYS | MOSFET 74 Amps 200V 0.034 Rds | 20 V | Through Hole | TO-3P-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 200 V | 74 A | 34 mOhms | Enhancement | ||||||
|
|
28
In-stock
|
IXYS | MOSFET 74 Amps 200V 0.034 Rds | 20 V | SMD/SMT | TO-268-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 200 V | 74 A | 34 mOhms | 5 V | 107 nC | Enhancement | PolarHT | |||
|
|
9,586
In-stock
|
Texas instruments | MOSFET N-CH NexFET Pwr MOSFET | 8 V | SMD/SMT | DSBGA-4 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 12 V | 1.6 A | 34 mOhms | 800 mV | 2.3 nC | Enhancement | NexFET | |||
|
|
45,000
In-stock
|
Toshiba | MOSFET N-Ch MOS 20A 40V 27W 985pF 0.034 | SMD/SMT | TO-252-3 | Reel | 1 Channel | Si | N-Channel | 40 V | 20 A | 34 mOhms | ||||||||||
|
|
VIEW | Diodes Incorporated | MOSFET N-Ch Dual MOSFET 20V VDSS 30A IDM | SMD/SMT | TSSOP-8 | Reel | 2 Channel | Si | N-Channel | 20 V | 5.2 A | 34 mOhms | ||||||||||
|
|
1,731
In-stock
|
IR / Infineon | MOSFET MOSFT DUAL N/PCh 12V 6.3A | 8 V | SMD/SMT | SO-8 | Reel | 2 Channel | Si | N-Channel, P-Channel | 12 V | 6.3 A | 34 mOhms | 5.7 nC |
