- Manufacture :
- Mounting Style :
- Package / Case :
- Minimum Operating Temperature :
- Transistor Polarity :
- Qg - Gate Charge :
- Tradename :
6 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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4,340
In-stock
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IR / Infineon | MOSFET 200V 1 N-CH HEXFET 59.9mOhms 34nC | 20 V | SMD/SMT | DirectFET-MZ | - 40 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 200 V | 4.6 A | 51 mOhms | 34 nC | Enhancement | Directfet | ||||
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26,850
In-stock
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Fairchild Semiconductor | MOSFET 150V N-Channel PowerTrench MOSFET | 20 V | SMD/SMT | Power-56-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 150 V | 16 A | 51 mOhms | 2.8 V | 6.1 nC | PowerTrench | ||||
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2,642
In-stock
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Fairchild Semiconductor | MOSFET 150V N-Channel PowerTrench MOSFET | 20 V | SMD/SMT | Power-33-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 150 V | 16 A | 51 mOhms | 2.9 V | 6 nC | PowerTrench | ||||
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260
In-stock
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IXYS | MOSFET 650V/9A Power MOSFET | 30 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 650 V | 64 A | 51 mOhms | 3 V | 143 nC | Enhancement | ||||
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5,000
In-stock
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onsemi | MOSFET -30V -25A P-Channel | 15 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 30 V | - 25 A | 51 mOhms | Enhancement | ||||||
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1,029
In-stock
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onsemi | MOSFET NCH 4V DRIVE SERIES | 20 V | SMD/SMT | TO-251-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 60 V | 20 A | 51 mOhms |
