- Manufacture :
- Mounting Style :
- Package / Case :
- Qg - Gate Charge :
4 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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272
In-stock
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onsemi | MOSFET GAN 600V 9A 290MO | 18 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | GaN | N-Channel | 600 V | 9 A | 350 mOhms | 1.6 V | 6.2 nC | Enhancement | |||||
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GET PRICE |
15,000
In-stock
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Infineon Technologies | MOSFET N-Ch 650V 9A TO220-3 CoolMOS CP | 20 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 9 A | 350 mOhms | 2.5 V | 22 nC | Enhancement | CoolMOS | |||
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1,437
In-stock
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Infineon Technologies | MOSFET N-Ch 600V 9A DPAK-2 | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 600 V | 9 A | 350 mOhms | 2.5 V | 22 nC | Enhancement | CoolMOS | ||||
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15,000
In-stock
|
Infineon Technologies | MOSFET N-Ch 650V 9A TO220-3 CoolMOS CP | 20 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 9 A | 350 mOhms | 2.5 V | 22 nC | Enhancement | CoolMOS |