- Vgs - Gate-Source Voltage :
- Minimum Operating Temperature :
- Maximum Operating Temperature :
- Number of Channels :
- Transistor Polarity :
- Vds - Drain-Source Breakdown Voltage :
- Vgs th - Gate-Source Threshold Voltage :
- Tradename :
- Applied Filters :
34 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
2,345
In-stock
|
IR / Infineon | MOSFET MOSFT 80V 39A 28mOhm 22nC Log Lvl | 16 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 80 V | 39 A | 28 mOhms | 2.5 V | 33 nC | ||||||
|
4,086
In-stock
|
Fairchild Semiconductor | MOSFET 100V 44a .28 Ohms/VGS=1V | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 100 V | 44 A | 28 mOhms | Enhancement | UltraFET | ||||||
|
2,023
In-stock
|
Infineon Technologies | MOSFET N-Ch 200V 34A D2PAK-2 OptiMOS 3 | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 200 V | 34 A | 28 mOhms | 2 V | 29 nC | Enhancement | OptiMOS | ||||
|
5,580
In-stock
|
IR / Infineon | MOSFET 100V 1 N-CH HEXFET DIRECTFET SJ | 20 V | SMD/SMT | DirectFET-SJ | - 40 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 100 V | 5.7 A | 28 mOhms | 14 nC | Enhancement | Directfet | |||||
|
3,554
In-stock
|
STMicroelectronics | MOSFET AC Pwr switch | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 100 V | 50 A | 28 mOhms | Enhancement | |||||||
|
3,311
In-stock
|
Infineon Technologies | MOSFET N-Ch 150V 30A CanPAK3 MZ OptiMOS 3 | WDSON-2-3 | Reel | 1 Channel | Si | N-Channel | 150 V | 30 A | 28 mOhms | OptiMOS | |||||||||||
|
2,473
In-stock
|
Diodes Incorporated | MOSFET 100V 175c N-Ch FET 28mOhm 10V 55A | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 100 V | 55 A | 28 mOhms | 2 V | 36 nC | Enhancement | |||||
|
4,470
In-stock
|
Fairchild Semiconductor | MOSFET 30V N-Ch PowerTrench | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 30 V | 21 A | 28 mOhms | Enhancement | PowerTrench | ||||||
|
2,986
In-stock
|
Diodes Incorporated | MOSFET P-Ch 60V Enh Mode 145W 20Vgs 2569pF | +/- 20 V | SMD/SMT | SOT-223-3 | - 55 C | + 150 C | Reel | Si | P-Channel | - 60 V | - 7 A | 28 mOhms | - 3 V | 53.1 nC | Enhancement | ||||||
|
2,178
In-stock
|
Fairchild Semiconductor | MOSFET SO-8 N-CH 60V | 20 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 60 V | 7 A | 28 mOhms | Enhancement | PowerTrench | ||||||
|
1,996
In-stock
|
Fairchild Semiconductor | MOSFET 100V N-Channel PowerTrench MOSFET | SMD/SMT | SOT-223-4 | + 150 C | Reel | 1 Channel | Si | N-Channel | 100 V | 6.6 A | 28 mOhms | 17 nC | PowerTrench | ||||||||
|
1,267
In-stock
|
Fairchild Semiconductor | MOSFET 100V 44A N-Channel PowerTrench | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 100 V | 7.2 A | 28 mOhms | Enhancement | UltraFET | ||||||
|
1,568
In-stock
|
onsemi | MOSFET 60V 45A N-Channel | 15 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 60 V | 45 A | 28 mOhms | Enhancement | |||||||
|
770
In-stock
|
Infineon Technologies | MOSFET N-Ch 200V 34A D2PAK-2 OptiMOS 3 | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 200 V | 34 A | 28 mOhms | 2 V | 29 nC | Enhancement | OptiMOS | ||||
|
2,490
In-stock
|
Diodes Incorporated | MOSFET N-Ch Enh Mode FET 100Vds 20Vgs 125W | 10 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 100 V | 55 A | 28 mOhms | 2.5 V | 36 nC | Enhancement | |||||
|
GET PRICE |
96,500
In-stock
|
Fairchild Semiconductor | MOSFET SO-8 DUAL N-CH 30V | 20 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel | 30 V | 6 A | 28 mOhms | Enhancement | PowerTrench | |||||
|
1,371
In-stock
|
onsemi | MOSFET NFET SO8 30V 7.5A 0.034R | 20 V | SMD/SMT | SOIC-8 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel | 30 V | 4.5 A | 28 mOhms | Enhancement | |||||||
|
6,920
In-stock
|
Nexperia | MOSFET PMV30XPEA/TO-236AB/REEL 7" Q3/ | +/- 12 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 20 V | - 5.3 A | 28 mOhms | - 1.25 V | 17 nC | Enhancement | |||||
|
2,642
In-stock
|
Diodes Incorporated | MOSFET 30V P-Ch Enh Mode 20Vgss 931pF 19.3nC | 20 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 30 V | - 5.8 A | 28 mOhms | - 2.4 V | 19.3 nC | Enhancement | PowerDI | ||||
|
393
In-stock
|
Fairchild Semiconductor | MOSFET UltraFET Power MOSFET | 16 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 100 V | 39 A | 28 mOhms | 1.6 V | 56 nC | ||||||
|
2,402
In-stock
|
Nexperia | MOSFET PMPB29XNE/SOT1220/REEL 7" Q1/T | SMD/SMT | DFN2020MD-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 5 A | 28 mOhms | 0.65 V | 12.4 nC | Enhancement | ||||||
|
575
In-stock
|
Diodes Incorporated | MOSFET 30V Dual N-Channel Enhance. Mode MOSFET | 20 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel | 30 V | 7.1 A | 28 mOhms | Enhancement | |||||||
|
73
In-stock
|
onsemi | MOSFET NFET D2PAK 100V 40A 30MO | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 100 V | 42 A | 28 mOhms | ||||||||
|
3,181
In-stock
|
Toshiba | MOSFET X35PBF Power MOSFET Trans VGS10VVDS150V | 20 V | SMD/SMT | SOP-Advance-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 150 V | 18 A | 28 mOhms | 2 V to 4 V | 10.6 nC | Enhancement | |||||
|
6,176
In-stock
|
Toshiba | MOSFET UFM S-MOS Pd: 0.8W F: 1MHz | 10 V | SMD/SMT | UFM-3 | Reel | 1 Channel | Si | N-Channel | 20 V | 1 mA | 28 mOhms | 13.6 nC | |||||||||
|
2,573
In-stock
|
Toshiba | MOSFET N-Ch -30V FET 1650pF -9A 1.9W | SMD/SMT | SOP-8 | Reel | 1 Channel | Si | P-Channel | - 30 V | - 9 A | 28 mOhms | |||||||||||
|
26
In-stock
|
Toshiba | MOSFET N-Ch 100V 21A 27W UMOSVIII 680pF 11nC | 20 V | SMD/SMT | TSON-Advance-8 | Reel | 1 Channel | Si | N-Channel | 100 V | 21 A | 28 mOhms | 2 V to 4 V | 11 nC | Enhancement | |||||||
|
2,500
In-stock
|
Fairchild Semiconductor | MOSFET SO8 SINGLE NCH/PCH | 20 V | SMD/SMT | SO-8 | - 55 C | + 175 C | Reel | 2 Channel | Si | N-Channel, P-Channel | 30 V | 6 A | 28 mOhms | Enhancement | PowerTrench | ||||||
|
3,000
In-stock
|
Nexperia | MOSFET PMPB29XPE/SOT1220/REEL 7" Q1/T | SMD/SMT | DFN2020MD-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 20 V | - 5 A | 28 mOhms | - 0.68 V | 30 nC | Enhancement | ||||||
|
VIEW | Diodes Incorporated | MOSFET P-Ch Enh Mode FET 33mOhm -20V -5.8A | - 6 V | SMD/SMT | U-WLB1515-9 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 20 V | - 4.2 A | 28 mOhms | - 1.1 V | 5.4 nC | Enhancement |