- Mounting Style :
- Minimum Operating Temperature :
- Maximum Operating Temperature :
- Number of Channels :
- Transistor Polarity :
- Vgs th - Gate-Source Threshold Voltage :
- Qg - Gate Charge :
30 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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4,086
In-stock
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Fairchild Semiconductor | MOSFET 100V 44a .28 Ohms/VGS=1V | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 100 V | 44 A | 28 mOhms | Enhancement | UltraFET | |||||
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1,907
In-stock
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Infineon Technologies | MOSFET N-Ch 200V 34A TO220-3 OptiMOS 3 | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 200 V | 34 A | 28 mOhms | 2 V | 29 nC | Enhancement | OptiMOS | |||
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2,023
In-stock
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Infineon Technologies | MOSFET N-Ch 200V 34A D2PAK-2 OptiMOS 3 | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 200 V | 34 A | 28 mOhms | 2 V | 29 nC | Enhancement | OptiMOS | |||
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5,580
In-stock
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IR / Infineon | MOSFET 100V 1 N-CH HEXFET DIRECTFET SJ | 20 V | SMD/SMT | DirectFET-SJ | - 40 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 100 V | 5.7 A | 28 mOhms | 14 nC | Enhancement | Directfet | ||||
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3,554
In-stock
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STMicroelectronics | MOSFET AC Pwr switch | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 100 V | 50 A | 28 mOhms | Enhancement | ||||||
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2,473
In-stock
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Diodes Incorporated | MOSFET 100V 175c N-Ch FET 28mOhm 10V 55A | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 100 V | 55 A | 28 mOhms | 2 V | 36 nC | Enhancement | ||||
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4,470
In-stock
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Fairchild Semiconductor | MOSFET 30V N-Ch PowerTrench | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 30 V | 21 A | 28 mOhms | Enhancement | PowerTrench | |||||
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2,178
In-stock
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Fairchild Semiconductor | MOSFET SO-8 N-CH 60V | 20 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 60 V | 7 A | 28 mOhms | Enhancement | PowerTrench | |||||
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1,267
In-stock
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Fairchild Semiconductor | MOSFET 100V 44A N-Channel PowerTrench | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 100 V | 7.2 A | 28 mOhms | Enhancement | UltraFET | |||||
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770
In-stock
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Infineon Technologies | MOSFET N-Ch 200V 34A D2PAK-2 OptiMOS 3 | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 200 V | 34 A | 28 mOhms | 2 V | 29 nC | Enhancement | OptiMOS | |||
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GET PRICE |
96,500
In-stock
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Fairchild Semiconductor | MOSFET SO-8 DUAL N-CH 30V | 20 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel | 30 V | 6 A | 28 mOhms | Enhancement | PowerTrench | ||||
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625
In-stock
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STMicroelectronics | MOSFET N-Ch 100 Volt 50 Amp | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 100 V | 50 A | 28 mOhms | Enhancement | ||||||
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1,515
In-stock
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STMicroelectronics | MOSFET N-Ch 60 Volt 38 Amp | 20 V | Through Hole | TO-220-3 | - 65 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 60 V | 38 A | 28 mOhms | Enhancement | ||||||
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1,371
In-stock
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onsemi | MOSFET NFET SO8 30V 7.5A 0.034R | 20 V | SMD/SMT | SOIC-8 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel | 30 V | 4.5 A | 28 mOhms | Enhancement | ||||||
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1,189
In-stock
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STMicroelectronics | MOSFET N-Ch 60 Volt 23 Amp | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 60 V | 23 A | 28 mOhms | Enhancement | ||||||
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2,642
In-stock
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Diodes Incorporated | MOSFET 30V P-Ch Enh Mode 20Vgss 931pF 19.3nC | 20 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 30 V | - 5.8 A | 28 mOhms | - 2.4 V | 19.3 nC | Enhancement | PowerDI | |||
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333
In-stock
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Infineon Technologies | MOSFET N-Ch 200V 34A TO220-3 OptiMOS 3 | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 200 V | 34 A | 28 mOhms | 2 V | 29 nC | Enhancement | OptiMOS | |||
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575
In-stock
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Diodes Incorporated | MOSFET 30V Dual N-Channel Enhance. Mode MOSFET | 20 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel | 30 V | 7.1 A | 28 mOhms | Enhancement | ||||||
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73
In-stock
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onsemi | MOSFET NFET D2PAK 100V 40A 30MO | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 100 V | 42 A | 28 mOhms | |||||||
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3,181
In-stock
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Toshiba | MOSFET X35PBF Power MOSFET Trans VGS10VVDS150V | 20 V | SMD/SMT | SOP-Advance-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 150 V | 18 A | 28 mOhms | 2 V to 4 V | 10.6 nC | Enhancement | ||||
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26
In-stock
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Toshiba | MOSFET N-Ch 100V 21A 27W UMOSVIII 680pF 11nC | 20 V | SMD/SMT | TSON-Advance-8 | Reel | 1 Channel | Si | N-Channel | 100 V | 21 A | 28 mOhms | 2 V to 4 V | 11 nC | Enhancement | ||||||
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2,500
In-stock
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Fairchild Semiconductor | MOSFET SO8 SINGLE NCH/PCH | 20 V | SMD/SMT | SO-8 | - 55 C | + 175 C | Reel | 2 Channel | Si | N-Channel, P-Channel | 30 V | 6 A | 28 mOhms | Enhancement | PowerTrench | |||||
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VIEW | IXYS | MOSFET 200V 80A | 20 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 200 V | 80 A | 28 mOhms | Enhancement | HyperFET | |||||
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VIEW | IXYS | MOSFET 80 Amps 200V 0.03 Rds | 20 V | SMD/SMT | TO-268-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 200 V | 80 A | 28 mOhms | Enhancement | HyperFET | |||||
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VIEW | IXYS | MOSFET 70 Amps 150V 0.028 Rds | 20 V | SMD/SMT | TO-268-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 150 V | 70 A | 28 mOhms | Enhancement | HyperFET | |||||
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VIEW | IXYS | MOSFET 67 Amps 150V 0.028 Rds | 20 V | SMD/SMT | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 150 V | 67 A | 28 mOhms | Enhancement | HyperFET | |||||
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VIEW | IXYS | MOSFET 80 Amps 200V 0.03 Rds | 20 V | Through Hole | TO-264-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 200 V | 80 A | 28 mOhms | Enhancement | HyperFET | |||||
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VIEW | IXYS | MOSFET 80 Amps 200V 0.03 Rds | 20 V | SMD/SMT | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 200 V | 71 A | 28 mOhms | Enhancement | HyperFET | |||||
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VIEW | STMicroelectronics | MOSFET N-Ch, 60V-0.022ohms 38A | 20 V | SMD/SMT | TO-263-3 | - 65 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 60 V | 38 A | 28 mOhms | Enhancement | ||||||
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VIEW | Toshiba | MOSFET MOSFET P-Ch 30V 6A | 20 V | SMD/SMT | VS8-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 30 V | - 6 A | 28 mOhms | Enhancement |
