- Vgs - Gate-Source Voltage :
- Mounting Style :
- Maximum Operating Temperature :
- Number of Channels :
- Transistor Polarity :
- Vds - Drain-Source Breakdown Voltage :
- Vgs th - Gate-Source Threshold Voltage :
- Qg - Gate Charge :
37 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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2,345
In-stock
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IR / Infineon | MOSFET MOSFT 80V 39A 28mOhm 22nC Log Lvl | 16 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 80 V | 39 A | 28 mOhms | 2.5 V | 33 nC | |||||
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4,086
In-stock
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Fairchild Semiconductor | MOSFET 100V 44a .28 Ohms/VGS=1V | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 100 V | 44 A | 28 mOhms | Enhancement | UltraFET | |||||
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1,907
In-stock
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Infineon Technologies | MOSFET N-Ch 200V 34A TO220-3 OptiMOS 3 | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 200 V | 34 A | 28 mOhms | 2 V | 29 nC | Enhancement | OptiMOS | |||
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2,023
In-stock
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Infineon Technologies | MOSFET N-Ch 200V 34A D2PAK-2 OptiMOS 3 | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 200 V | 34 A | 28 mOhms | 2 V | 29 nC | Enhancement | OptiMOS | |||
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3,554
In-stock
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STMicroelectronics | MOSFET AC Pwr switch | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 100 V | 50 A | 28 mOhms | Enhancement | ||||||
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2,473
In-stock
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Diodes Incorporated | MOSFET 100V 175c N-Ch FET 28mOhm 10V 55A | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 100 V | 55 A | 28 mOhms | 2 V | 36 nC | Enhancement | ||||
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4,470
In-stock
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Fairchild Semiconductor | MOSFET 30V N-Ch PowerTrench | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 30 V | 21 A | 28 mOhms | Enhancement | PowerTrench | |||||
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2,986
In-stock
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Diodes Incorporated | MOSFET P-Ch 60V Enh Mode 145W 20Vgs 2569pF | +/- 20 V | SMD/SMT | SOT-223-3 | - 55 C | + 150 C | Reel | Si | P-Channel | - 60 V | - 7 A | 28 mOhms | - 3 V | 53.1 nC | Enhancement | |||||
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2,178
In-stock
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Fairchild Semiconductor | MOSFET SO-8 N-CH 60V | 20 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 60 V | 7 A | 28 mOhms | Enhancement | PowerTrench | |||||
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1,267
In-stock
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Fairchild Semiconductor | MOSFET 100V 44A N-Channel PowerTrench | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 100 V | 7.2 A | 28 mOhms | Enhancement | UltraFET | |||||
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1,568
In-stock
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onsemi | MOSFET 60V 45A N-Channel | 15 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 60 V | 45 A | 28 mOhms | Enhancement | ||||||
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770
In-stock
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Infineon Technologies | MOSFET N-Ch 200V 34A D2PAK-2 OptiMOS 3 | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 200 V | 34 A | 28 mOhms | 2 V | 29 nC | Enhancement | OptiMOS | |||
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2,490
In-stock
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Diodes Incorporated | MOSFET N-Ch Enh Mode FET 100Vds 20Vgs 125W | 10 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 100 V | 55 A | 28 mOhms | 2.5 V | 36 nC | Enhancement | ||||
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GET PRICE |
96,500
In-stock
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Fairchild Semiconductor | MOSFET SO-8 DUAL N-CH 30V | 20 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel | 30 V | 6 A | 28 mOhms | Enhancement | PowerTrench | ||||
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625
In-stock
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STMicroelectronics | MOSFET N-Ch 100 Volt 50 Amp | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 100 V | 50 A | 28 mOhms | Enhancement | ||||||
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1,371
In-stock
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onsemi | MOSFET NFET SO8 30V 7.5A 0.034R | 20 V | SMD/SMT | SOIC-8 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel | 30 V | 4.5 A | 28 mOhms | Enhancement | ||||||
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1,189
In-stock
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STMicroelectronics | MOSFET N-Ch 60 Volt 23 Amp | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 60 V | 23 A | 28 mOhms | Enhancement | ||||||
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6,920
In-stock
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Nexperia | MOSFET PMV30XPEA/TO-236AB/REEL 7" Q3/ | +/- 12 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 20 V | - 5.3 A | 28 mOhms | - 1.25 V | 17 nC | Enhancement | ||||
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2,642
In-stock
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Diodes Incorporated | MOSFET 30V P-Ch Enh Mode 20Vgss 931pF 19.3nC | 20 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 30 V | - 5.8 A | 28 mOhms | - 2.4 V | 19.3 nC | Enhancement | PowerDI | |||
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333
In-stock
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Infineon Technologies | MOSFET N-Ch 200V 34A TO220-3 OptiMOS 3 | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 200 V | 34 A | 28 mOhms | 2 V | 29 nC | Enhancement | OptiMOS | |||
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393
In-stock
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Fairchild Semiconductor | MOSFET UltraFET Power MOSFET | 16 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 100 V | 39 A | 28 mOhms | 1.6 V | 56 nC | |||||
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2,402
In-stock
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Nexperia | MOSFET PMPB29XNE/SOT1220/REEL 7" Q1/T | SMD/SMT | DFN2020MD-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 5 A | 28 mOhms | 0.65 V | 12.4 nC | Enhancement | |||||
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575
In-stock
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Diodes Incorporated | MOSFET 30V Dual N-Channel Enhance. Mode MOSFET | 20 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel | 30 V | 7.1 A | 28 mOhms | Enhancement | ||||||
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8,552
In-stock
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Fairchild Semiconductor | MOSFET 150V N-Channel QFET | 25 V | Through Hole | TO-3PN-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 150 V | 70 A | 28 mOhms | Enhancement | QFET | |||||
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73
In-stock
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onsemi | MOSFET NFET D2PAK 100V 40A 30MO | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 100 V | 42 A | 28 mOhms | |||||||
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3,181
In-stock
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Toshiba | MOSFET X35PBF Power MOSFET Trans VGS10VVDS150V | 20 V | SMD/SMT | SOP-Advance-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 150 V | 18 A | 28 mOhms | 2 V to 4 V | 10.6 nC | Enhancement | ||||
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2,500
In-stock
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Fairchild Semiconductor | MOSFET SO8 SINGLE NCH/PCH | 20 V | SMD/SMT | SO-8 | - 55 C | + 175 C | Reel | 2 Channel | Si | N-Channel, P-Channel | 30 V | 6 A | 28 mOhms | Enhancement | PowerTrench | |||||
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3,375
In-stock
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Infineon Technologies | MOSFET 80V 1 N-CH HEXFET PWR MOSFET 28mOhms | 16 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 80 V | 30 A | 28 mOhms | 2.5 V | 22 nC | Enhancement | ||||
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3,000
In-stock
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Nexperia | MOSFET PMPB29XPE/SOT1220/REEL 7" Q1/T | SMD/SMT | DFN2020MD-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 20 V | - 5 A | 28 mOhms | - 0.68 V | 30 nC | Enhancement | |||||
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VIEW | Diodes Incorporated | MOSFET P-Ch Enh Mode FET 33mOhm -20V -5.8A | - 6 V | SMD/SMT | U-WLB1515-9 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 20 V | - 4.2 A | 28 mOhms | - 1.1 V | 5.4 nC | Enhancement |
