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5 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | |
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2,223
In-stock
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STMicroelectronics | MOSFET N-channel 525 V 4.4 A DPAK TO-220F | 30 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 525 V | 4.4 A | 1.28 Ohms | ||||||
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971
In-stock
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STMicroelectronics | MOSFET N-Ch, 620V-1.1ohms 5.5A | 30 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 620 V | 5.5 A | 1.28 Ohms | 3.75 V | 34 nC | Enhancement | |||
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2,500
In-stock
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STMicroelectronics | MOSFET N-Channel 620V 1.1 Ohms 5.5A | 30 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 650 V | 5.5 A | 1.28 Ohms | 34 nC | Enhancement | ||||
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VIEW | STMicroelectronics | MOSFET N-Ch 620V 1.28 Ohm 5.0A DPAK | SMD/SMT | TO-252-3 | Tube | 1 Channel | Si | N-Channel | 620 V | 5 A | 1.28 Ohms | |||||||||
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790
In-stock
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STMicroelectronics | MOSFET N-channel 620V 1.1 | 30 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 620 V | 5.5 A | 1.28 Ohms | 34 nC | Enhancement |
