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- Package / Case :
- Transistor Polarity :
- Vds - Drain-Source Breakdown Voltage :
- Id - Continuous Drain Current :
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20 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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5,086
In-stock
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Fairchild Semiconductor | MOSFET N-Channel MOSFET 600V 5.5A 1.25Ohm | Through Hole | TO-251-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 5.5 A | 1.05 Ohms | UniFET | |||||||
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4,363
In-stock
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Fairchild Semiconductor | MOSFET -100V Single | 30 V | SMD/SMT | SOT-223-4 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 100 V | - 1 A | 1.05 Ohms | Enhancement | ||||||
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3,378
In-stock
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Fairchild Semiconductor | MOSFET 100V P-Channel QFET | 30 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 100 V | - 3.6 A | 1.05 Ohms | Enhancement | ||||||
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26,210
In-stock
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Fairchild Semiconductor | MOSFET N-Channel 600V 5.5A | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 600 V | 5.5 A | 1.05 Ohms | ||||||||
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520
In-stock
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IXYS | MOSFET 12 Amps 1000V | 30 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 1000 V | 12 A | 1.05 Ohms | 6.5 V | 80 nC | Enhancement | Polar, HiPerFET | |||
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133
In-stock
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IXYS | MOSFET Q3Class HiPerFET Pwr MOSFET 1000V/15A | 30 V | Through Hole | TO-247-3 | Tube | 1 Channel | Si | N-Channel | 1000 V | 15 A | 1.05 Ohms | 64 nC | HyperFET | |||||||
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583
In-stock
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Fairchild Semiconductor | MOSFET 600V N-Chan MOSFET UniFET-II | 30 V | Through Hole | TO-220-3 | Tube | 1 Channel | Si | N-Channel | 600 V | 6.5 A | 1.05 Ohms | 5 V | 13 nC | UniFET | ||||||
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1,649
In-stock
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Infineon Technologies | MOSFET 500V 3.5A 2.2Ohm MotIRFET | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 500 V | 6 A | 1.05 Ohms | 3 V to 5 V | 34 nC | Enhancement | ||||
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333
In-stock
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STMicroelectronics | MOSFET N-Ch, 800V-0.95ohms Mdmesh 6.5A | 30 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 800 V | 6.5 A | 1.05 Ohms | 4 V | 18 nC | Enhancement | ||||
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29
In-stock
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IXYS | MOSFET Q3Class HiPerFET Pwr MOSFET 1000V/15A | 30 V | SMD/SMT | TO-268-3 | Tube | 1 Channel | Si | N-Channel | 1000 V | 15 A | 1.05 Ohms | 64 nC | HyperFET | |||||||
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6,000
In-stock
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Toshiba | MOSFET Small-signal Nch MOSFET ID:0.4A | 20 V | SMD/SMT | SOT-346-3 | + 150 C | Reel | 1 Channel | Si | N-Channel | 60 V | 400 mA | 1.05 Ohms | 1.1 V | 600 pC | Enhancement | |||||
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4,995
In-stock
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STMicroelectronics | MOSFET N-Ch, 800V-0.95ohms Mdmesh 6.5A | 30 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 800 V | 6.5 A | 1.05 Ohms | 4 V | 18 nC | Enhancement | ||||
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1,998
In-stock
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STMicroelectronics | MOSFET N-CH 800V IPAK DPAK Mdmesh PWR MOSFET | 30 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 800 V | 6.5 A | 1.05 Ohms | 4 V | 18 nC | Enhancement | ||||
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10,000
In-stock
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Toshiba | MOSFET Small-signal Nch MOSFET | 20 V | SMD/SMT | CST3-3 | + 150 C | Reel | 1 Channel | Si | N-Channel | 60 V | 400 mA | 1.05 Ohms | 1.1 V | 600 pC | Enhancement | |||||
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VIEW | IXYS | MOSFET 1KV 12A | 20 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 1000 V | 12 A | 1.05 Ohms | Enhancement | HyperFET | |||||
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VIEW | IXYS | MOSFET 12 Amps 1000V 1.05 Rds | 20 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 1000 V | 12 A | 1.05 Ohms | Enhancement | ||||||
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VIEW | IXYS | MOSFET 12 Amps 1000V 1.05 Rds | 20 V | SMD/SMT | TO-268-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 1000 V | 12 A | 1.05 Ohms | Enhancement | HyperFET | |||||
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VIEW | IXYS | MOSFET 12 Amps 1000V 1.05 Rds | Through Hole | TO-247-3 | Tube | 1 Channel | Si | N-Channel | 1000 V | 12 A | 1.05 Ohms | Enhancement | |||||||||
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3,000
In-stock
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STMicroelectronics | MOSFET N-Ch, 800V-0.95ohms Mdmesh 6.5A | 30 V | Through Hole | TO-251-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 800 V | 6.5 A | 1.05 Ohms | 18 nC | Enhancement | |||||
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540
In-stock
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STMicroelectronics | MOSFET N-Ch 640V 5A 0.88Ohm typ. Mdmesh II | 25 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 640 V | 5 A | 1.05 Ohms | 4 V | 14 nC |
