- Package / Case :
- Transistor Polarity :
- Id - Continuous Drain Current :
- Qg - Gate Charge :
- Applied Filters :
5 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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3,725
In-stock
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Fairchild Semiconductor | MOSFET -30V 20A P-Channel PowerTrench | 25 V | SMD/SMT | Power-33-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 30 V | - 9.5 A | 14.4 mOhms | Enhancement | PowerTrench | |||||
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10,792
In-stock
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Infineon Technologies | MOSFET 60V 1 N-CH HEXFET 14.4mOhms 23nC | 20 V | SMD/SMT | PQFN-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 60 V | 40 A | 14.4 mOhms | 4 V | 23 nC | |||||
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2,222
In-stock
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IR / Infineon | MOSFET 100V 1 N-CH HEXFET 18mOhms 28nC | 20 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 100 V | 8.3 A | 14.4 mOhms | 4.9 V | 28 nC | |||||
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3,000
In-stock
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Toshiba | MOSFET WCSP6C S-MOS TRSTR Pd=0mW F=1MHz | 4.5 V | SMD/SMT | WCSP6C-6 | Reel | 1 Channel | Si | N-Channel | 12 V | 7 A | 14.4 mOhms | 5.4 nC | ||||||||
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VIEW | Toshiba | MOSFET N-ch 30V 40A DP | SMD/SMT | TO-252-3 | Reel | 1 Channel | Si | N-Channel | 30 V | 40 A | 14.4 mOhms |
