- Manufacture :
- Vgs - Gate-Source Voltage :
- Mounting Style :
- Package / Case :
- Transistor Polarity :
- Vds - Drain-Source Breakdown Voltage :
- Id - Continuous Drain Current :
- Vgs th - Gate-Source Threshold Voltage :
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5 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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15,227
In-stock
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Diodes Incorporated | MOSFET 20V P-Ch ENH Mode 495mOhm -4.5V -0.77A | + /- 8 V | SMD/SMT | X2-DFN1006-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 20 V | - 1.17 A | 960 mOhms | - 0.7 V | 1.5 nC | Enhancement | ||||
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106
In-stock
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IXYS | MOSFET 28 Amps 600V 0.1 Rds | 20 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 24 A | 960 mOhms | Enhancement | CoolMOS | |||||
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6,850
In-stock
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Diodes Incorporated | MOSFET 20V P-Ch Enh FET Pd .43W -8Vgss -5.0A | +/- 8 V | SMD/SMT | X1-DFN1006-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 20 V | - 770 mA | 960 mOhms | - 700 mV | 1.5 nC | Enhancement | ||||
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1
In-stock
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Fairchild Semiconductor | MOSFET 900V N-Channel QFET | 30 V | Through Hole | TO-3PN-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 900 V | 11.4 A | 960 mOhms | Enhancement | QFET | |||||
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VIEW | Diodes Incorporated | MOSFET MOSFET P-CH | SMD/SMT | X1-DFN1006-3 | Reel | Si | P-Channel | - 20 V | - 1.17 A | 960 mOhms |
