- Number of Channels :
- Transistor Polarity :
- Vds - Drain-Source Breakdown Voltage :
- Id - Continuous Drain Current :
- Qg - Gate Charge :
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- Applied Filters :
26 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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33,217
In-stock
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Infineon Technologies | MOSFET P-Ch SOT-23-3 | +/- 20 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 60 V | - 330 mA | 1.4 Ohms | - 2 V | 3.57 nC | Enhancement | ||||
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25,096
In-stock
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Nexperia | MOSFET 30V 350 MA N-CH TRENCH MOSFET | 8 V | SMD/SMT | SOT-323-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 350 mA | 1.4 Ohms | 0.9 V | 0.52 nC | |||||
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11,451
In-stock
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Diodes Incorporated | MOSFET 50V 200mW | 20 V | SMD/SMT | SOT-323-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 75 V | 200 mA | 1.4 Ohms | Enhancement | ||||||
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4,492
In-stock
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Fairchild Semiconductor | MOSFET 200V N-Ch QFET Logic Level | 30 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 200 V | 3 A | 1.4 Ohms | Enhancement | ||||||
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3,912
In-stock
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Fairchild Semiconductor | MOSFET 200V P-Channel QFET | 30 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 200 V | - 3.7 A | 1.4 Ohms | Enhancement | ||||||
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23,460
In-stock
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Fairchild Semiconductor | MOSFET UniFET 500V 4A | 30 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 500 V | 4 A | 1.4 Ohms | Enhancement | ||||||
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1,620
In-stock
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STMicroelectronics | MOSFET POWER MOSFET | 25 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 600 V | 3.5 A | 1.4 Ohms | 3 V | 8.5 nC | Enhancement | ||||
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4,596
In-stock
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onsemi | MOSFET NFET WDFN6 30V 1.4 Ohms | 10 V | SMD/SMT | WDFN-6 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel | 30 V | 245 mA | 1.4 Ohms | 0.75 nC | ||||||
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16,631
In-stock
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Diodes Incorporated | MOSFET 50V N-Ch Enh FET 20Vgss 300Pd 200mA | 20 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 50 V | 200 mA | 1.4 Ohms | 1.2 V | - | Enhancement | ||||
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2,692
In-stock
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Diodes Incorporated | MOSFET N-Chnl 50V | 20 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 50 V | 200 mA | 1.4 Ohms | Enhancement | ||||||
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789
In-stock
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Fairchild Semiconductor | MOSFET 500V N-Channel Adv Q-FET C-Series | 30 V | SMD/SMT | TO-263-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 500 V | 5 A | 1.4 Ohms | Enhancement | QFET | |||||
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8,650
In-stock
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Nexperia | MOSFET 30V 400 MA N-CH TRENCH MOSFET | 8 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 400 mA | 1.4 Ohms | |||||||
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10,312
In-stock
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Infineon Technologies | MOSFET P-Ch SOT-23-3 | +/- 20 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 60 V | - 330 mA | 1.4 Ohms | - 2 V | 3.57 nC | Enhancement | ||||
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5,961
In-stock
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Nexperia | MOSFET 30V 350 MA DUAL N-CH TRENCH MOSFET | 8 V | SMD/SMT | SOT-363-6 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel | 30 V | 350 mA | 1.4 Ohms | Enhancement | ||||||
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10,229
In-stock
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Infineon Technologies | MOSFET P-Ch -60V -330mA SOT-23-3 | +/- 20 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 60 V | - 330 mA | 1.4 Ohms | - 2 V | 3.57 nC | Enhancement | ||||
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4,531
In-stock
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Nexperia | MOSFET 30/30V, 350/200 MA N/P-CH TRENCH MOSFET | SMD/SMT | SOT-363-6 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel, P-Channel | 30 V | 350 mA, - 200 mA | 1.4 Ohms | - 0.9 V, 0.9 V | 0.52 nC | Enhancement | |||||
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1,265
In-stock
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Infineon Technologies | MOSFET P-Ch -100V -680mA SOT-223-3 | +/- 20 V | SMD/SMT | SOT-223-4 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 100 V | - 680 mA | 1.4 Ohms | - 2 V | - 6.4 nC | Enhancement | ||||
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2,340
In-stock
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onsemi | MOSFET NFET XLLGA3 20V 230MA | 8 V | SMD/SMT | XLLGA-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 20 V | 224 mA | 1.4 Ohms | 1 V | 0.7 nC | Enhancement | ||||
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6,710
In-stock
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Nexperia | MOSFET N-Chan 30V 530mA | 8 V | SMD/SMT | DFN1006B-3 | Reel | 1 Channel | Si | N-Channel | 30 V | 530 mA | 1.4 Ohms | |||||||||
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10,000
In-stock
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onsemi | MOSFET NFET SC75 30V 154MA 7OHM | 10 V | SMD/SMT | SC-75-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 154 mA | 1.4 Ohms | |||||||
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5,064
In-stock
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Diodes Incorporated | MOSFET 60V N-Ch Enh FET 20Vgs 0.4A 32pF | 20 V | SMD/SMT | X1-DFN1212-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 60 V | 400 mA | 1.4 Ohms | 1 V | 0.55 nC | Enhancement | ||||
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485
In-stock
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Infineon Technologies | MOSFET P-Ch -100V -680mA SOT-223-3 | +/- 20 V | SMD/SMT | SOT-223-4 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 100 V | - 680 mA | 1.4 Ohms | - 2 V | - 6.4 nC | Enhancement | ||||
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9,983
In-stock
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Diodes Incorporated | MOSFET MOSFET BVDSS | 20 V | SMD/SMT | X1-DFN1006-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 60 V | 410 mA | 1.4 Ohms | 1.3 V | 2.8 nC | Enhancement | ||||
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2,500
In-stock
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Infineon Technologies | MOSFET N-Ch 800V 3.9A DPAK-2 | 30 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 800 V | 3.9 A | 1.4 Ohms | 3 V | 23 nC | CoolMOS | ||||
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VIEW | Diodes Incorporated | MOSFET 60V N-Ch Enh FET 20Vgs 0.4A 32pF | 20 V | SMD/SMT | X1-DFN1212-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 60 V | 400 mA | 1.4 Ohms | 1 V | 0.55 nC | Enhancement | ||||
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910
In-stock
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Infineon Technologies | MOSFET N-Ch 600V 3.2A DPAK-2 CoolMOS C3 | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 600 V | 3.2 A | 1.4 Ohms | Enhancement | CoolMOS |
