- Manufacture :
- Package / Case :
- Minimum Operating Temperature :
- Id - Continuous Drain Current :
- Qg - Gate Charge :
14 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | |
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112,307
In-stock
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Diodes Incorporated | MOSFET N-Channel | 20 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 60 V | 380 mA | 3 Ohms | 1.6 V | 0.3 nC | Enhancement | |||
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1,120,800
In-stock
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Nexperia | MOSFET 60 V, single N-chan Trench MOSFET | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 60 V | 190 mA | 3 Ohms | 1.6 V | 0.33 nC | Enhancement | ||||
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12,817
In-stock
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Fairchild Semiconductor | MOSFET NCHAN Enhance MOSFET | SMD/SMT | SOT-323-3 | Reel | 1 Channel | Si | N-Channel | 60 V | 310 mA | 3 Ohms | Enhancement | ||||||||
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2,605
In-stock
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Diodes Incorporated | MOSFET MOSFET BVDSS: 41V-60 X2-DFN1006-3 T&R 3K | 20 V | SMD/SMT | X1-DFN1006-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 60 V | 100 mA | 3 Ohms | 1 V | 0.45 nC | Enhancement | |||
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11,192
In-stock
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Diodes Incorporated | MOSFET MOSFET BVDSS: 61V-10 X1-DFN1006-3 T&R 10K | 20 V | SMD/SMT | X1-DFN1006-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 60 V | 400 mA | 3 Ohms | 2 V | Enhancement | ||||
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4,121
In-stock
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Diodes Incorporated | MOSFET MOSFET BVDSS: 61V-10 100V SOT323 T&R 3K | 20 V | SMD/SMT | SOT-323-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 60 V | 300 mA | 3 Ohms | 2 V | 0.87 nC | Enhancement | |||
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11,215
In-stock
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Nexperia | MOSFET NX7002AK/TO-236AB/REEL 11" Q3/ | 20 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 60 V | 300 mA | 3 Ohms | 1.1 V | 430 pC | Enhancement | |||
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3,640
In-stock
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Nexperia | MOSFET 60 V, single N-chan Trench MOSFET | SMD/SMT | SOT-323-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 60 V | 170 mA | 3 Ohms | 1.6 V | 0.33 nC | Enhancement | ||||
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6,053
In-stock
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Diodes Incorporated | MOSFET 60V N-Ch Enh FET 7.5Ohm 5Vgs 210mA | 20 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 60 V | 170 mA | 3 Ohms | 2 V | 352 pC | Enhancement | |||
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2,080
In-stock
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Diodes Incorporated | MOSFET 2N7002 Family | 20 V | SMD/SMT | SOT-323-3 | - 65 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 60 V | 300 mA | 3 Ohms | 1 V | Enhancement | ||||
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3,174
In-stock
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Diodes Incorporated | MOSFET 60V N-Ch Dual Enh 20Vgss 300mW Pd | 20 V | SMD/SMT | X1-DFN1006-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 60 V | 400 mA | 3 Ohms | 1.2 V | - | Enhancement | |||
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11,769
In-stock
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Diodes Incorporated | MOSFET N-Channel | 20 V | SMD/SMT | SOT-523-3 | - 65 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 60 V | 300 mA | 3 Ohms | Enhancement | |||||
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3,000
In-stock
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Diodes Incorporated | MOSFET N-Channel | 20 V | SMD/SMT | SOT-23-3 | - 65 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 60 V | 800 mA | 3 Ohms | Enhancement | |||||
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6,000
In-stock
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Diodes Incorporated | MOSFET N-Channel | 20 V | SMD/SMT | SOT-323-3 | - 65 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 60 V | 800 mA | 3 Ohms | Enhancement |
