- Minimum Operating Temperature :
- Number of Channels :
- Transistor Polarity :
- Vds - Drain-Source Breakdown Voltage :
- Id - Continuous Drain Current :
- Qg - Gate Charge :
- Tradename :
- Applied Filters :
38 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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112,307
In-stock
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Diodes Incorporated | MOSFET N-Channel | 20 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 60 V | 380 mA | 3 Ohms | 1.6 V | 0.3 nC | Enhancement | ||||
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13,541
In-stock
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STMicroelectronics | MOSFET N-Ch 400V 3.3 Ohm 3A SuperMESH3 3.3W | 30 V | SMD/SMT | SOT-223-3 | Reel | 1 Channel | Si | N-Channel | 400 V | 1.8 A | 3 Ohms | 3.75 V | 11 nC | |||||||
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2,011
In-stock
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STMicroelectronics | MOSFET 950 VDSS | 30 V | SMD/SMT | TO-252-3 | Reel | 1 Channel | Si | N-Channel | 950 V | 4 A | 3 Ohms | 19 nC | ||||||||
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10,201
In-stock
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Diodes Incorporated | MOSFET Dual N-Channel | 20 V | SMD/SMT | SOT-363-6 | - 65 C | + 150 C | Reel | 2 Channel | Si | N-Channel | 50 V | 305 mA | 3 Ohms | Enhancement | ||||||
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1,120,800
In-stock
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Nexperia | MOSFET 60 V, single N-chan Trench MOSFET | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 60 V | 190 mA | 3 Ohms | 1.6 V | 0.33 nC | Enhancement | |||||
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12,817
In-stock
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Fairchild Semiconductor | MOSFET NCHAN Enhance MOSFET | SMD/SMT | SOT-323-3 | Reel | 1 Channel | Si | N-Channel | 60 V | 310 mA | 3 Ohms | Enhancement | |||||||||
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2,605
In-stock
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Diodes Incorporated | MOSFET MOSFET BVDSS: 41V-60 X2-DFN1006-3 T&R 3K | 20 V | SMD/SMT | X1-DFN1006-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 60 V | 100 mA | 3 Ohms | 1 V | 0.45 nC | Enhancement | ||||
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4,242
In-stock
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Diodes Incorporated | MOSFET N-Channel | 20 V | SMD/SMT | SOT-323-3 | - 65 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 50 V | 300 mA | 3 Ohms | Enhancement | ||||||
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11,192
In-stock
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Diodes Incorporated | MOSFET MOSFET BVDSS: 61V-10 X1-DFN1006-3 T&R 10K | 20 V | SMD/SMT | X1-DFN1006-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 60 V | 400 mA | 3 Ohms | 2 V | Enhancement | |||||
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168
In-stock
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IXYS | MOSFET 4 Amps 1000V 2.8 Rds | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 1000 V | 4 A | 3 Ohms | Enhancement | HyperFET | |||||
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1,328
In-stock
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Infineon Technologies | MOSFET P-Ch -250V -430mA SOT-223-3 | +/- 20 V | SMD/SMT | SOT-223-4 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 250 V | - 430 mA | 3 Ohms | - 2 V | - 15.1 nC | Enhancement | ||||
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GET PRICE |
6,060
In-stock
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Infineon Technologies | MOSFET N-Ch 600V 1.8A IPAK-3 CoolMOS C3 | 20 V | SMD/SMT | TO-251-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 1.8 A | 3 Ohms | Enhancement | CoolMOS | ||||
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4,121
In-stock
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Diodes Incorporated | MOSFET MOSFET BVDSS: 61V-10 100V SOT323 T&R 3K | 20 V | SMD/SMT | SOT-323-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 60 V | 300 mA | 3 Ohms | 2 V | 0.87 nC | Enhancement | ||||
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4,207
In-stock
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Diodes Incorporated | MOSFET Dual N-Channel | 20 V | SMD/SMT | SOT-563-6 | - 65 C | + 150 C | Reel | 2 Channel | Si | N-Channel | 60 V | 800 mA | 3 Ohms | 2.5 V | Enhancement | |||||
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6,584
In-stock
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Nexperia | MOSFET 60 V, single N-chan Trench MOSFET | SMD/SMT | SOT-363-6 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel | 60 V | 170 mA | 3 Ohms | 1.6 V | 0.33 nC | Enhancement | |||||
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1,424
In-stock
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Infineon Technologies | MOSFET P-Ch -250V -430mA SOT-223-3 | +/- 20 V | SMD/SMT | SOT-223-4 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 250 V | - 430 mA | 3 Ohms | - 2 V | - 15.1 nC | Enhancement | ||||
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11,215
In-stock
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Nexperia | MOSFET NX7002AK/TO-236AB/REEL 11" Q3/ | 20 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 60 V | 300 mA | 3 Ohms | 1.1 V | 430 pC | Enhancement | ||||
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3,640
In-stock
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Nexperia | MOSFET 60 V, single N-chan Trench MOSFET | SMD/SMT | SOT-323-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 60 V | 170 mA | 3 Ohms | 1.6 V | 0.33 nC | Enhancement | |||||
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6,053
In-stock
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Diodes Incorporated | MOSFET 60V N-Ch Enh FET 7.5Ohm 5Vgs 210mA | 20 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 60 V | 170 mA | 3 Ohms | 2 V | 352 pC | Enhancement | ||||
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175
In-stock
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Infineon Technologies | MOSFET N-Ch 500V 1.8A DPAK-2 CoolMOS C3 | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 500 V | 1.8 A | 3 Ohms | Enhancement | CoolMOS | |||||
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2,080
In-stock
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Diodes Incorporated | MOSFET 2N7002 Family | 20 V | SMD/SMT | SOT-323-3 | - 65 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 60 V | 300 mA | 3 Ohms | 1 V | Enhancement | |||||
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3,174
In-stock
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Diodes Incorporated | MOSFET 60V N-Ch Dual Enh 20Vgss 300mW Pd | 20 V | SMD/SMT | X1-DFN1006-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 60 V | 400 mA | 3 Ohms | 1.2 V | - | Enhancement | ||||
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150
In-stock
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IXYS | MOSFET 3.5 Amps 800V 3 Rds | 30 V | SMD/SMT | TO-263-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 800 V | 3.5 A | 3 Ohms | Enhancement | ||||||
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19,550
In-stock
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Toshiba | MOSFET N-Ch MOS 3A 500V 60W 280pF 3 Ohm | SMD/SMT | TO-252-3 | Reel | 1 Channel | Si | N-Channel | 500 V | 3 A | 3 Ohms | ||||||||||
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11,769
In-stock
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Diodes Incorporated | MOSFET N-Channel | 20 V | SMD/SMT | SOT-523-3 | - 65 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 60 V | 300 mA | 3 Ohms | Enhancement | ||||||
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9,000
In-stock
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Diodes Incorporated | MOSFET Dual N-Channel | 20 V | SMD/SMT | SOT-363-6 | - 65 C | + 150 C | Reel | 2 Channel | Si | N-Channel | 60 V | 800 mA | 3 Ohms | Enhancement | ||||||
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12,000
In-stock
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Diodes Incorporated | MOSFET N-Ch -20V VDSS 230mA 300mW | 10 V | SMD/SMT | SOT-523-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 20 V | 230 mA | 3 Ohms | Enhancement | ||||||
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3,000
In-stock
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Diodes Incorporated | MOSFET N-Channel | 20 V | SMD/SMT | SOT-23-3 | - 65 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 60 V | 800 mA | 3 Ohms | Enhancement | ||||||
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6,000
In-stock
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Diodes Incorporated | MOSFET N-Channel | 20 V | SMD/SMT | SOT-323-3 | - 65 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 60 V | 800 mA | 3 Ohms | Enhancement | ||||||
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5,965
In-stock
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Diodes Incorporated | MOSFET N-Ch 50Vds 12Vgs FET Enh Mode 50pF 1Vgs | 12 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 50 V | 300 mA | 3 Ohms | 1 V | 0.6 nC | Enhancement |
