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27 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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964
In-stock
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STMicroelectronics | MOSFET POWER MOSFET | 30 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 800 V | 4 A | 1.5 Ohms | 3 V | 5 nC | Enhancement | |||||
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985
In-stock
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STMicroelectronics | MOSFET POWER MOSFET | 30 V | Through Hole | TO-220FP-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 800 V | 4 A | 1.5 Ohms | 3 V | 5 nC | Enhancement | |||||
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9,090
In-stock
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Diodes Incorporated | MOSFET N-Chnl 60V | 20 V | Through Hole | TO-92-3 | - 55 C | + 150 C | Bulk | 1 Channel | Si | N-Channel | 60 V | 600 mA | 1.5 Ohms | Enhancement | |||||||
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998
In-stock
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Fairchild Semiconductor | MOSFET 800V N-Channel QFET | 30 V | Through Hole | TO-262-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 800 V | 6.6 A | 1.5 Ohms | Enhancement | |||||||
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2,842
In-stock
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Diodes Incorporated | MOSFET Avalanche | 20 V | Through Hole | TO-92-3 | - 55 C | + 150 C | Bulk | 1 Channel | Si | N-Channel | 60 V | 600 mA | 1.5 Ohms | Enhancement | |||||||
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868
In-stock
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STMicroelectronics | MOSFET N-Ch 800 Volt 6.2A Zener SuperMESH | 30 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 800 V | 6.2 A | 1.5 Ohms | 46 nC | Enhancement | ||||||
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801
In-stock
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STMicroelectronics | MOSFET N-Ch 800 Volt 6.2Amp Zener SuperMESH | 30 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 800 V | 6.2 A | 1.5 Ohms | 46 nC | Enhancement | ||||||
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9,252
In-stock
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Fairchild Semiconductor | MOSFET N-CH/600V/6.26 A QFET C-Series | 30 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 6.26 A | 1.5 Ohms | Enhancement | |||||||
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464
In-stock
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Fairchild Semiconductor | MOSFET UNIFET 500V N-CHANNEL MOSFET, GREEN EMC | 30 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 500 V | 5 A | 1.5 Ohms | 5 V | 12.8 nC | ||||||
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46,200
In-stock
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STMicroelectronics | MOSFET N-Ch 800 Volt 6.2 A | 30 V | Through Hole | TO-220FP-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 800 V | 6.2 A | 1.5 Ohms | 46 nC | Enhancement | ||||||
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1,844
In-stock
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Fairchild Semiconductor | MOSFET 200V N-CHAN | 30 V | Through Hole | TO-92-3 | - 55 C | + 150 C | Ammo Pack | 1 Channel | Si | N-Channel | 200 V | 1 A | 1.5 Ohms | Enhancement | |||||||
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273
In-stock
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IXYS | MOSFET N-CH MOSFETS (D2) 500V 3A | 20 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 500 V | 3 A | 1.5 Ohms | 40 nC | |||||||
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1,346
In-stock
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onsemi | MOSFET NFET 500V 5A 1.2 | 30 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 500 V | 5.5 A | 1.5 Ohms | 3.9 V | 18.5 nC | ||||||
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1,731
In-stock
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Diodes Incorporated | MOSFET Avalanche | 20 V | Through Hole | TO-92-3 | - 55 C | + 150 C | Bulk | 1 Channel | Si | N-Channel | 60 V | 600 mA | 1.5 Ohms | 3 V | Enhancement | ||||||
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41
In-stock
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IXYS | MOSFET | 20 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 1000 V | 10 A | 1.5 Ohms | 200 nC | Depletion | ||||||
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30
In-stock
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IXYS | MOSFET D2 Depletion Mode Power MOSFETs | Through Hole | TO-268-3 | Tube | 1 Channel | Si | N-Channel | 1000 V | 10 A | 1.5 Ohms | Depletion | ||||||||||
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444
In-stock
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Diodes Incorporated | MOSFET N-Chnl 60V | 20 V | Through Hole | TO-92-3 | - 55 C | + 150 C | Bulk | 1 Channel | Si | N-Channel | 60 V | 600 mA | 1.5 Ohms | 3 V | Enhancement | ||||||
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250
In-stock
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Microsemi | MOSFET Power MOSFET - MOS8 | 30 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Reel | Si | N-Channel | 1200 V | 8 A | 1.5 Ohms | 4 V | 80 nC | Enhancement | POWER MOS 8 | |||||
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394
In-stock
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Toshiba | MOSFET MOSFET N-CH 500V, 5A | 30 V | Through Hole | TO-220FP-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 500 V | 5 A | 1.5 Ohms | ||||||||
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1,199
In-stock
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STMicroelectronics | MOSFET N-Ch 500 Volt 4.4 A Zener SuperMESH | 30 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 500 V | 4.4 A | 1.5 Ohms | Enhancement | |||||||
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VIEW | Toshiba | MOSFET N-Ch MOS 5A 525V 35W 540pF 1.5 OhM | Through Hole | TO-220FP-3 | 1 Channel | Si | N-Channel | 525 V | 5 A | 1.5 Ohms | ||||||||||||
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VIEW | STMicroelectronics | MOSFET N Ch 520V Zener SuperMESH | 30 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 520 V | 4.4 A | 1.5 Ohms | Enhancement | |||||||
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VIEW | IXYS | MOSFET 7 Amps 900V 1.5W Rds | 20 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 900 V | 7 A | 1.5 Ohms | Enhancement | HyperFET | ||||||
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VIEW | STMicroelectronics | MOSFET N-CHANNEL 500 V 1.22 OHM - 4.4A | 30 V | Through Hole | TO-262-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 500 V | 4.4 A | 1.5 Ohms | Enhancement | |||||||
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VIEW | STMicroelectronics | MOSFET N-Ch, 500V-1.22ohms Zener SuperMESH 4.4 | 30 V | Through Hole | TO-220FP-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 500 V | 4.4 A | 1.5 Ohms | Enhancement | |||||||
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VIEW | STMicroelectronics | MOSFET N-Ch 525V 1.2 Ohm 4.4A SuperMESH 3 | 30 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 525 V | 4.4 A | 1.5 Ohms | 17 nC | Enhancement | ||||||
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1,275
In-stock
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Infineon Technologies | MOSFET N-Ch 600V 3.1A IPAK-3 | 20 V | Through Hole | TO-251-3 | - 40 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 3.1 A | 1.5 Ohms | 2.5 V | 9.4 nC | Enhancement | CoolMOS |