- Minimum Operating Temperature :
- Maximum Operating Temperature :
- Number of Channels :
- Transistor Polarity :
- Vds - Drain-Source Breakdown Voltage :
- Id - Continuous Drain Current :
- Qg - Gate Charge :
- Tradename :
- Applied Filters :
26 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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250
In-stock
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STMicroelectronics | MOSFET | +/- 30 V | SMD/SMT | TO-263-3 | - 55 C | + 150 C | 1 Channel | Si | N-Channel | 900 V | 8 A | 600 mOhms | 3 V | 11 nC | Enhancement | |||||
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30,717
In-stock
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onsemi | MOSFET 20V 0.88mA P-Channel ESD Protection | 12 V | SMD/SMT | SOT-363-6 | - 55 C | + 150 C | Reel | 2 Channel | Si | P-Channel | - 20 V | - 880 mA | 600 mOhms | Enhancement | ||||||
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5,886
In-stock
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Infineon Technologies | MOSFET N-Ch 600V 7.3A D2PAK-2 CoolMOS C3 | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 600 V | 7.3 A | 600 mOhms | Enhancement | CoolMOS | |||||
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5,816
In-stock
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IR / Infineon | MOSFET MOSFT 200V 5A 600mOhm 15nC | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 200 V | 5 A | 600 mOhms | 15 nC | Enhancement | |||||
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2,032
In-stock
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STMicroelectronics | MOSFET N-Ch 600V 0.57 Ohm 8A FDmesh II PWR | 25 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 650 V | 8 A | 600 mOhms | |||||||
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10,236
In-stock
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Infineon Technologies | MOSFET MOSFT P-Ch -0.62A 600mOhm 2.4nC LogLvl | 12 V | SMD/SMT | SOT-23-3 | Reel | 1 Channel | Si | P-Channel | - 20 V | - 620 mA | 600 mOhms | 2.4 nC | ||||||||
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1,346
In-stock
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Fairchild Semiconductor | MOSFET 600V N-Channel MOSFET | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 650 V | 7.4 A | 600 mOhms | 3.5 V | 20 nC | SuperFET II | ||||
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26,250
In-stock
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Infineon Technologies | MOSFET 200V 1 N-CH HEXFET 600mOhms 15nC | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 200 V | 5 A | 600 mOhms | 15 nC | Enhancement | |||||
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7,692
In-stock
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Infineon Technologies | MOSFET MOSFT P-Ch -0.62A 600mOhm 2.4nC LogLvl | 12 V | SMD/SMT | SOT-23-3 | Reel | 1 Channel | Si | P-Channel | - 20 V | - 780 mA | 600 mOhms | 2.4 nC | ||||||||
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3,000
In-stock
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IR / Infineon | MOSFET 200V 1 N-CH HEXFET 600mOhms 15nC | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 200 V | 5 A | 600 mOhms | 15 nC | Enhancement | |||||
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44,430
In-stock
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Infineon Technologies | MOSFET MOSFT P-Ch -0.61A 600mOhm 3.4nC LogLvl | 20 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 30 V | - 760 mA | 600 mOhms | - 1 V | 3.4 nC | |||||
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1,524
In-stock
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Infineon Technologies | MOSFET 200V 1 N-CH HEXFET 600mOhms 15nC | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 200 V | 5 A | 600 mOhms | 15 nC | Enhancement | |||||
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739
In-stock
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Infineon Technologies | MOSFET N-Ch 700V 7.3A D2PAK-2 CoolMOS C6 | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 650 V | 7.3 A | 600 mOhms | 23 nC | CoolMOS | |||||
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2,546
In-stock
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Diodes Incorporated | MOSFET 60V N-Ch Enh FET 500mOhm 1.3A 120mJ | - | SMD/SMT | SO-8 | - 40 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 60 V | 1.3 A | 600 mOhms | - | Enhancement | IntelliFET | ||||
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10,000
In-stock
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Diodes Incorporated | MOSFET MOSFET BVDSS: 8V-24V X1-DFN1006-3 T&R 10K | 12 V | SMD/SMT | X1-DFN1006-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 20 V | 760 mA | 600 mOhms | 400 mV | 930 pC | Enhancement | ||||
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GET PRICE |
439,000
In-stock
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Diodes Incorporated | MOSFET 60V P-Chnl UMOS | 20 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 60 V | - 1.1 A | 600 mOhms | Enhancement | |||||
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30
In-stock
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IXYS | MOSFET 16 Amps 800V 0.6 Rds | 30 V | SMD/SMT | TO-268-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 800 V | 16 A | 600 mOhms | Enhancement | HyperFET | |||||
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148
In-stock
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Toshiba | MOSFET N-Ch 500V FET Vgss 30V 45W .45 ohm | SMD/SMT | TO-220FP-3 | 1 Channel | Si | N-Channel | 500 V | 11 A | 600 mOhms | |||||||||||
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VIEW | IXYS | MOSFET PolarHV HiPerFETs 500V-1.2Kv Red Rds | 30 V | SMD/SMT | TO-268-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 900 V | 18 A | 600 mOhms | HyperFET | ||||||
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57,000
In-stock
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Diodes Incorporated | MOSFET N-Ch Dual MOSFET 25V VDSS 8V VGSS | SMD/SMT | X1-DFN1006-3 | Reel | 2 Channel | Si | N-Channel | 25 V | 1.3 A | 600 mOhms | ||||||||||
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8,600
In-stock
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Infineon Technologies | MOSFET N-Ch 700V 7.3A DPAK-2 | 30 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 650 V | 7.3 A | 600 mOhms | 3 V | 23 nC | CoolMOS | ||||
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VIEW | IXYS | MOSFET 13 Amps 800V 0.6 Rds | 20 V | SMD/SMT | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 800 V | 13 A | 600 mOhms | Enhancement | HyperFET | |||||
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VIEW | IXYS | MOSFET 15 Amps 800V 0.6 Rds | 20 V | SMD/SMT | TO-268-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 800 V | 15 A | 600 mOhms | Enhancement | HyperFET | |||||
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VIEW | STMicroelectronics | MOSFET N-Ch 600V 0.55 Ohm typ. 7.5A | 25 V | SMD/SMT | TO-263-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 650 V | 7.5 A | 600 mOhms | 4 V | 13.5 nC | |||||
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919
In-stock
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Infineon Technologies | MOSFET N-Ch 600V 6.1A D2PAK-2 CoolMOS CP | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 150 C | Reel | 1 Channel | GaN | N-Channel | 600 V | 6.1 A | 600 mOhms | 3.5 V | 21 nC | Enhancement | CoolMOS | |||
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GET PRICE |
12,110
In-stock
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Infineon Technologies | MOSFET N-Ch 600V 6.1A DPAK-2 CoolMOS CP | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | GaN | N-Channel | 600 V | 6.1 A | 600 mOhms | Enhancement | CoolMOS |
