- Vgs - Gate-Source Voltage :
6 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
25,834
In-stock
|
Infineon Technologies | MOSFET N-Ch 100V 190mA SOT-23-3 | 20 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 100 V | 190 mA | 2.4 Ohms | 800 mV | 900 pC | Enhancement | |||
|
|
33,861
In-stock
|
Infineon Technologies | MOSFET N-Ch 100V 190mA SOT-23-3 | 20 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 100 V | 190 mA | 2.4 Ohms | 800 mV | 900 pC | Enhancement | |||
|
|
17,194
In-stock
|
Infineon Technologies | MOSFET N-Ch 100V 190mA SOT-23-3 | 20 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 100 V | 190 mA | 2.4 Ohms | 800 mV | 900 pC | Enhancement | |||
|
|
8,460
In-stock
|
Infineon Technologies | MOSFET N-Ch 100V 190mA SOT-23-3 | 20 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 100 V | 190 mA | 2.4 Ohms | 800 mV | 900 pC | Enhancement | |||
|
|
10,970
In-stock
|
Infineon Technologies | MOSFET N-Ch 100V 190mA SOT-23-3 | +/- 20 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 100 V | 190 mA | 2.4 Ohms | 800 mV | 900 pC | Enhancement | |||
|
|
3,506
In-stock
|
Infineon Technologies | MOSFET N-Ch 100V 190mA SOT-23-3 | 20 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 100 V | 190 mA | 2.4 Ohms | 800 mV | 900 pC | Enhancement |
