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19 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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32,136
In-stock
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Fairchild Semiconductor | MOSFET 20V Dual N-Channel PowerTrench | 8 V | SMD/SMT | UMLP-6 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel | 20 V | 3.4 A | 55 mOhms | 0.7 V | 3 nC | PowerTrench | ||||
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137,170
In-stock
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IR / Infineon | MOSFET MOSFT 20V 1.2A 250mOhm 2.6nC LogLvl | 12 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 20 V | 1.2 A | 250 mOhms | 0.7 V | 2.6 nC | ||||
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5,310
In-stock
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IR / Infineon | MOSFET MOSFT 20V 8.7A 22mOhm 32nC | 12 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 20 V | 8.7 A | 22 mOhms | 0.7 V | 48 nC | |||||
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10,679
In-stock
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IR / Infineon | MOSFET MOSFT 20V 3.2A 100mOhm 4.7nC LogLvl | 12 V | SMD/SMT | Micro-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 20 V | 3.2 A | 170 mOhms | 0.7 V | 4.7 nC | |||||
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3,740
In-stock
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IR / Infineon | MOSFET 20V 1 N-CH HEXFET 22mOhms 32nC | 12 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 20 V | 8.7 A | 22 mOhms | 0.7 V | 32 nC | Enhancement | ||||
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5,118
In-stock
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Infineon Technologies | MOSFET MOSFT 20V 6.8A 35mOhm 14nC | 12 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 20 V | 6.8 A | 35 mOhms | 0.7 V | 14 nC | |||||
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3,983
In-stock
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Fairchild Semiconductor | MOSFET 20V N-Channel PowerTrench | 8 V | SMD/SMT | UMLP-6 | Reel | 1 Channel | Si | N-Channel | 20 V | 7 A | 19 mOhms | 0.7 V | 9.2 nC | PowerTrench | ||||||
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2,732
In-stock
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Fairchild Semiconductor | MOSFET 30V Integrated NMOS and Shottky Diode | 5.5 V | SMD/SMT | WLCSP-4 | - 55 C | + 125 C | Reel | 1 Channel | Si | N-Channel | 30 V | 1.1 A | 462 mOhms | 0.7 V | 1 nC | |||||
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4,773
In-stock
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Diodes Incorporated | MOSFET 30V N Chnl UMOS | 12 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 2 A | 150 mOhms | 0.7 V | 2.93 nC | Enhancement | ||||
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1,555
In-stock
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Infineon Technologies | MOSFET 20V DUAL N-CH HEXFET 29mOhms 18nC | 12 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Tube | 2 Channel | Si | N-Channel | 20 V | 6.6 A | 29 mOhms | 0.7 V | 18 nC | Enhancement | ||||
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1,869
In-stock
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IR / Infineon | MOSFET MOSFT DUAL NCh 20V 6.6A | 12 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel | 20 V | 6.6 A | 30 mOhms | 0.7 V | 18 nC | |||||
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1,015
In-stock
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Diodes Incorporated | MOSFET 20V N-Ch Enh Mode FET 12Vgss 1.05W | 12 V | SMD/SMT | PowerDI3333-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 20 V | 18.1 A | 8.7 mOhms | 0.7 V | 68.8 nC | Enhancement | ||||
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1,960
In-stock
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Diodes Incorporated | MOSFET 20V N-Ch Enh FET 6495pF 66.8nC | 4.5 V | SMD/SMT | PowerDI3333-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 20 V | 24.1 A | 8.7 mOhms | 0.7 V | 68.8 nC | Enhancement | ||||
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70
In-stock
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Nexperia | MOSFET 40V 2A PNP Trans N-chan Trench MOSFET | SMD/SMT | DFN2020-6 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel, P-Channel | 40 V | 1.8 A | 580 mOhms | 0.7 V | 0.89 nC | Enhancement | |||||
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2,854
In-stock
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STMicroelectronics | MOSFET N-CH 20V 0.025Ohm 23A STripFET V | 8 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 20 V | 2.3 A | 30 mOhms | 0.7 V | 6 nC | |||||
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12,500
In-stock
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Diodes Incorporated | MOSFET Low Side IntelliFET | 5 V | SMD/SMT | SO-8 | - 40 C | + 125 C | Reel | 1 Channel | N-Channel | 60 V | 2 A | 150 mOhms | 0.7 V | Enhancement | IntelliFET | |||||
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73
In-stock
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IR / Infineon | MOSFET 20V 1 N-CH HEXFET 35mOhms 14nC | 12 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 20 V | 6.8 A | 35 mOhms | 0.7 V | 14 nC | Enhancement | ||||
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114
In-stock
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IR / Infineon | MOSFET 20V 1 N-CH HEXFET 35mOhms 14nC | 12 V | SMD/SMT | Micro-8 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 20 V | 5.7 A | 35 mOhms | 0.7 V | 14 nC | Enhancement | ||||
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359
In-stock
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Nexperia | MOSFET PMPB20UN/SOT1220/REEL7 | SMD/SMT | DFN2020MD-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 20 V | 9.4 A | 19 mOhms | 0.7 V | 4.7 nC | Enhancement |
