- Vgs - Gate-Source Voltage :
- Mounting Style :
- Maximum Operating Temperature :
- Packaging :
- Number of Channels :
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- Id - Continuous Drain Current :
- Rds On - Drain-Source Resistance :
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29 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Pd - Power Dissipation | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | Forward Transconductance - Min | Rise Time | Fall Time | Package | Factory Pack Quantity | RoHS | |
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7,650
In-stock
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Infineon Technologies | MOSFET TRENCH <= 40V | - 20 V, + 20 V | Tape & Reel (TR) | 1 Channel | 83 W | N-Channel | 40 V | 40 A | 2.1 mOhms | 2.3 V | 31 nC | 110 S | 1.6 ns | 4 ns | TSDSON-FL-8 | 5000 | Green available | ||||||||||
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5,731
In-stock
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Infineon Technologies | MOSFET N-Ch 75V 100A TDSON-8 | 20 V | SMD/SMT | TDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 75 V | 100 A | 2.9 mOhms | 2.3 V | 63.4 nC | Enhancement | |||||||||||
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4,574
In-stock
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Infineon Technologies | MOSFET N-Ch 75V 100A TDSON-8 OptiMOS 3 | 20 V | SMD/SMT | TDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 75 V | 100 A | 3.7 mOhms | 2.3 V | 69 nC | Enhancement | OptiMOS | ||||||||||
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657
In-stock
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Infineon Technologies | MOSFET N-Ch 75V 100A TO220-3 OptiMOS 3 | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 75 V | 120 A | 2.1 mOhms | 2.3 V | 206 nC | Enhancement | OptiMOS | ||||||||||
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1,639
In-stock
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Infineon Technologies | MOSFET N-Ch 75V 100A TDSON-8 | 20 V | SMD/SMT | TDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 75 V | 100 A | 2.9 mOhms | 2.3 V | 63.4 nC | Enhancement | OptiMOS | ||||||||||
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3,077
In-stock
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IR / Infineon | MOSFET MOSFT 30V 161A 3.3mOhm 34nC Log Lvl | SMD/SMT | TO-252-3 | + 175 C | Reel | 1 Channel | Si | N-Channel | 30 V | 161 A | 3.3 mOhms | 2.3 V | 50 nC | ||||||||||||||
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4,862
In-stock
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Infineon Technologies | MOSFET N-Ch 75V 100A TDSON-8 OptiMOS 3 | 20 V | SMD/SMT | TDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 75 V | 100 A | 3.7 mOhms | 2.3 V | 69 nC | Enhancement | OptiMOS | ||||||||||
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2,114
In-stock
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Infineon Technologies | MOSFET 30V 1 N-CH HEXFET 3.3mOhms 34nC | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 30 V | 161 A | 3.2 mOhms | 2.3 V | 34 nC | Enhancement | |||||||||||
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690
In-stock
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Infineon Technologies | MOSFET N-Ch 75V 100A D2PAK-2 OptiMOS 3 | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 75 V | 100 A | 2.7 mOhms | 2.3 V | 117 nC | Enhancement | OptiMOS | ||||||||||
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GET PRICE |
2,081,600
In-stock
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onsemi | MOSFET NFET 60V 115MA 7MO | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 60 V | 380 mA | 2.5 Ohms | 2.3 V | 0.7 nC | ||||||||||||
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1,580
In-stock
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Fairchild Semiconductor | MOSFET DUAL N-CHANNEL POWER TRENCH MOSFET | 20 V | SMD/SMT | Power-33-8 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel | 30 V, 30 V | 6 A, 8 A | 10 mOhms, 19 mOhms | 2.3 V | 3.1 nC, 7 nC | Enhancement | PowerTrench | ||||||||||
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1,828
In-stock
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Diodes Incorporated | MOSFET 30V N-Ch Enh FET 4.6mOhm 10Vgs 17.6A | 20 V | SMD/SMT | PowerDI3333-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 17.6 A | 4.6 mOhms | 2.3 V | 41 nC | Enhancement | PowerDI | ||||||||||
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3,248
In-stock
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Diodes Incorporated | MOSFET 30V N & P Comp FET Enh 2.3Vgs 25nC 22nC | 20 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel, P-Channel | 30 V | 8.2 A, 6.2 A | 15 mOhms, 30 mOhms | 2.3 V | 11.3 nC, 10.9 nC | Enhancement | |||||||||||
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165
In-stock
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Infineon Technologies | MOSFET N-Ch 75V 100A TO220-3 OptiMOS 3 | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 75 V | 120 A | 2.1 mOhms | 2.3 V | 206 nC | Enhancement | OptiMOS | ||||||||||
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3,504
In-stock
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Toshiba | MOSFET U-MOSVIII-H 30V 68A 6.8nC MOSFET | 20 V | SMD/SMT | SOP-Advance-8 | Reel | 1 Channel | Si | N-Channel | 30 V | 68 A | 6.2 mOhms | 2.3 V | 14.8 nC | Enhancement | |||||||||||||
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4,882
In-stock
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Toshiba | MOSFET N-Ch DTMOS VII-H 24W 630pF 38A 30V | 20 V | SMD/SMT | SOP-Advance-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 38 A | 10.2 mOhms | 2.3 V | 9.8 nC | Enhancement | |||||||||||
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3,425
In-stock
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Toshiba | MOSFET U-MOSVIII-H 30V 63A 6.8nC MOSFET | 20 V | SMD/SMT | TSON-Advance-8 | Reel | 1 Channel | Si | N-Channel | 30 V | 63 A | 6.3 mOhms | 2.3 V | 14.8 nC | Enhancement | |||||||||||||
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1,900
In-stock
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Toshiba | MOSFET N-Ch DTMOS VII-H 34W 1050pF 57A 30V | 20 V | SMD/SMT | SOP-Advance-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 57 A | 6.8 mOhms | 2.3 V | 17 nC | Enhancement | |||||||||||
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674
In-stock
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Toshiba | MOSFET N-Ch DTMOS VII-H 21W 510pF 32A 30V | 20 V | SMD/SMT | SOP-Advance-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 32 A | 12.6 mOhms | 2.3 V | 7.5 nC | Enhancement | |||||||||||
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2,098
In-stock
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Toshiba | MOSFET N-Ch DTMOS VII-H 1.9W 630pF 15A 30V | 20 V | SMD/SMT | SOP-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 15 A | 10.4 mOhms | 2.3 V | 9.8 nC | Enhancement | |||||||||||
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38
In-stock
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Toshiba | MOSFET N-Ch DTMOS VII-H 19W 510pF 31A 30V | 20 V | SMD/SMT | TSON-Advance-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 31 A | 12.6 mOhms | 2.3 V | 7.5 nC | Enhancement | |||||||||||
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20,000
In-stock
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Infineon Technologies | MOSFET N-Ch 75V 80A D2PAK-2 OptiMOS 3 | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 75 V | 80 A | 4.4 mOhms | 2.3 V | 68 nC | Enhancement | OptiMOS | ||||||||||
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VIEW | Infineon Technologies | MOSFET N-Ch 75V 100A D2PAK-2 OptiMOS 3 | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 75 V | 100 A | 2.7 mOhms | 2.3 V | 117 nC | Enhancement | OptiMOS | ||||||||||
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VIEW | Infineon Technologies | MOSFET N-Ch 75V 80A D2PAK-2 OptiMOS 3 | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 75 V | 80 A | 4.4 mOhms | 2.3 V | 68 nC | Enhancement | OptiMOS | ||||||||||
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VIEW | Diodes Incorporated | MOSFET 30V N-Ch Enh FET 4.6mOhm 10Vgs 17.6A | 20 V | SMD/SMT | PowerDI3333-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 17.6 A | 4.6 mOhms | 2.3 V | 41 nC | Enhancement | PowerDI | ||||||||||
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3,634
In-stock
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Toshiba | MOSFET N-Ch DTMOS VII-H 1.9W 1050pF 19A 30V | 20 V | SMD/SMT | SOP-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 19 A | 7 mOhms | 2.3 V | 17 nC | Enhancement | |||||||||||
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2,679
In-stock
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Toshiba | MOSFET N-Ch DTMOS VII-H 32W 1050pF 56A 30V | 20 V | SMD/SMT | TSON-Advance-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 56 A | 6.8 mOhms | 2.3 V | 17 nC | Enhancement | |||||||||||
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1,878
In-stock
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Toshiba | MOSFET N-Ch DTMOS VII-H 22W 630pF 37A 30V | 20 V | SMD/SMT | TSON-Advance-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 37 A | 10.2 mOhms | 2.3 V | 9.8 nC | Enhancement | |||||||||||
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20,000
In-stock
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Toshiba | MOSFET 40V N0Ch PWR FET 40A 47W 1920pF | 20 V | SMD/SMT | TO-252-3 | Reel | 1 Channel | Si | N-Channel | 40 V | 40 A | 10.3 mOhms | 2.3 V | 29 nC | Enhancement |
