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Package / Case :
Packaging :
Vds - Drain-Source Breakdown Voltage :
Qg - Gate Charge :
4 products
IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Vgs - Gate-Source Voltage Mounting Style Package / Case Minimum Operating Temperature Maximum Operating Temperature Packaging Number of Channels Technology Transistor Polarity Vds - Drain-Source Breakdown Voltage Id - Continuous Drain Current Rds On - Drain-Source Resistance Vgs th - Gate-Source Threshold Voltage Qg - Gate Charge Channel Mode
STF10N60M2
1+
$1.610
10+
$1.380
100+
$1.060
500+
$0.932
RFQ
75,100
In-stock
STMicroelectronics MOSFET N-CH 600V 0.56Ohm 7.5A MDmesh M2 25 V Through Hole TO-220-3 - 55 C + 150 C Tube 1 Channel Si N-Channel 600 V 7.5 A 560 mOhms 3 V 13.5 nC  
STP10N60M2
1+
$1.600
10+
$1.360
100+
$1.050
500+
$0.922
RFQ
802
In-stock
STMicroelectronics MOSFET N-CH 600V 0.56Ohm 7.5A MDmesh M2 25 V Through Hole TO-220-3 - 55 C + 150 C Tube 1 Channel Si N-Channel 600 V 7.5 A 560 mOhms 3 V 13.5 nC  
STD10N60M2
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RFQ
3,100
In-stock
STMicroelectronics MOSFET N-CH 600V 0.56Ohm 7.5A MDmesh M2 25 V SMD/SMT TO-252-3 - 55 C + 150 C Reel 1 Channel Si N-Channel 600 V 7.5 A 560 mOhms 3 V 13.5 nC  
STD9NM50N
1+
$2.170
10+
$1.840
100+
$1.470
500+
$1.290
2500+
$0.993
RFQ
2,500
In-stock
STMicroelectronics MOSFET N Ch 500V 0.47 Ohm 7.5A 25 V SMD/SMT TO-252-3 - 55 C + 150 C Reel 1 Channel Si N-Channel 500 V 7.5 A 560 mOhms 3 V 14 nC Enhancement
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