- Manufacture :
- Mounting Style :
- Package / Case :
- Maximum Operating Temperature :
- Rds On - Drain-Source Resistance :
- Qg - Gate Charge :
5 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
3,466
In-stock
|
Infineon Technologies | MOSFET 55V 1 N-CH HEXFET 27mOhms 32nC | 16 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 55 V | 60 A | 13.5 mOhms | 3 V | 23 nC | Enhancement | ||||
|
242
In-stock
|
Infineon Technologies | MOSFET MOSFT 55V 60A 13.5mOhm 23nC LogLvl | SMD/SMT | TO-252-3 | + 175 C | Reel | 1 Channel | Si | N-Channel | 55 V | 60 A | 13.5 mOhms | 3 V | 35 nC | |||||||
|
58
In-stock
|
Microsemi | MOSFET Power MOSFET - CoolMOS | 30 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Si | N-Channel | 600 V | 60 A | 45 mOhms | 3 V | 150 nC | Enhancement | ||||||
|
36
In-stock
|
Microsemi | MOSFET Power MOSFET | 30 V | SMD/SMT | D3PAK-3 | - 55 C | + 150 C | Reel | Si | N-Channel | 600 V | 60 A | 45 mOhms | 3 V | 150 nC | Enhancement | |||||
|
33
In-stock
|
Microsemi | MOSFET Power MOSFET - MOS8 | 30 V | Through Hole | TO-264-3 | - 55 C | + 150 C | 1 Channel | Si | N-Channel | 600 V | 60 A | 90 mOhms | 3 V | 280 nC | Enhancement |