- Mounting Style :
- Package / Case :
- Minimum Operating Temperature :
- Maximum Operating Temperature :
- Rds On - Drain-Source Resistance :
10 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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984
In-stock
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STMicroelectronics | MOSFET POWER MOSFET | 25 V | Through Hole | TO-220FP-3 | - 55 C | + 150 C | 1 Channel | Si | N-Channel | 600 V | 10 A | 370 mOhms | 3 V | 16.5 nC | Enhancement | ||||||
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908
In-stock
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STMicroelectronics | MOSFET POWER MOSFET | 25 V | Through Hole | TO-220-3 | - 55 C | + 150 C | 1 Channel | Si | N-Channel | 600 V | 10 A | 370 mOhms | 3 V | 16.5 nC | Enhancement | ||||||
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3,582
In-stock
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Fairchild Semiconductor | MOSFET 10a 100V 0.165 Ohm 1Ch HS Logic Gate | 16 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 100 V | 10 A | 130 mOhms | 3 V | 16 nC | Enhancement | |||||
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761
In-stock
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STMicroelectronics | MOSFET POWER MOSFET | 25 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 500 V | 10 A | 380 mOhms | 3 V | 15 nC | Enhancement | |||||
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393
In-stock
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STMicroelectronics | MOSFET N-channel 650 V, 0.37 Ohm typ., 10 A MDmesh M2 Power MOS... | 25 V | Through Hole | TO-220FP-3 | - 55 C | + 150 C | 1 Channel | Si | N-Channel | 650 V | 10 A | 430 mOhms | 3 V | 17 nC | Enhancement | ||||||
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534
In-stock
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Infineon Technologies | MOSFET N-Ch 500V 10A TO220-3 | 20 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 500 V | 10 A | 350 mOhms | 3 V | 19 nC | Enhancement | CoolMOS | ||||
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500
In-stock
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Infineon Technologies | MOSFET | +/- 20 V | SMD/SMT | VSON-4 | - 40 C | + 150 C | 1 Channel | Si | N-Channel | 600 V | 10 A | 0.31 Ohms | 3 V | 13 nC | Enhancement | CoolMOS | |||||
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950
In-stock
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onsemi | MOSFET NFET T0220FP 600V 10A .65 | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 10 A | 650 mOhms | 3 V | 47 nC | |||||||
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VIEW | STMicroelectronics | MOSFET N-Ch 650 V 0.75 Ohm 10 A Zener-protect | 30 V | Through Hole | TO-281-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 650 V | 10 A | 750 mOhms | 3 V | 42 nC | Enhancement | |||||
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2,348
In-stock
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STMicroelectronics | MOSFET POWER MOSFET | 25 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 600 V | 10 A | 370 mOhms | 3 V | 16.5 nC | Enhancement |