- Manufacture :
- Vgs - Gate-Source Voltage :
- Mounting Style :
- Package / Case :
- Minimum Operating Temperature :
- Maximum Operating Temperature :
- Rds On - Drain-Source Resistance :
11 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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868
In-stock
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Infineon Technologies | MOSFET | 30 V | Through Hole | TO-220-3 | - 50 C | + 150 C | 1 Channel | Si | N-Channel | 800 V | 17 A | 280 mOhms | 3 V | 36 nC | Enhancement | CoolMOS | |||||
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671
In-stock
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Infineon Technologies | MOSFET | 30 V | Through Hole | TO-220FP-3 | - 55 C | + 150 C | 1 Channel | Si | N-Channel | 800 V | 17 A | 280 mOhms | 3 V | 36 nC | Enhancement | CoolMOS | |||||
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500
In-stock
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Infineon Technologies | MOSFET HIGH POWER NEW | +/- 20 V | SMD/SMT | HSOF-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 600 V | 17 A | 129 mOhms | 3 V | 23 nC | Enhancement | |||||
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281
In-stock
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Infineon Technologies | MOSFET | 30 V | SMD/SMT | TO-247-3 | - 50 C | + 150 C | 1 Channel | Si | N-Channel | 800 V | 17 A | 280 mOhms | 3 V | 36 nC | Enhancement | CoolMOS | |||||
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2,630
In-stock
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STMicroelectronics | MOSFET N-channel 250 V 17A STripFET II | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 250 V | 17 A | 165 mOhms | 3 V | 29.5 nC | Enhancement | |||||
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378
In-stock
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Toshiba | MOSFET N-Ch 800V 2050pF 32nC 17A 180W | 20 V | Through Hole | TO-220-3 | + 150 C | 1 Channel | Si | N-Channel | 800 V | 17 A | 250 mOhms | 3 V | 32 nC | Enhancement | |||||||
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543
In-stock
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Toshiba | MOSFET N-Ch 800V 2050pF 32nC 17A 45W | 20 V | Through Hole | TO-220FP-3 | + 150 C | Tube | 1 Channel | Si | N-Channel | 800 V | 17 A | 250 mOhms | 3 V | 32 nC | Enhancement | ||||||
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VIEW | Infineon Technologies | MOSFET N-Ch 500V 17A TO220-3 | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 500 V | 17 A | 180 mOhms | 3 V | 34 nC | CoolMOS | ||||||
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VIEW | STMicroelectronics | MOSFET N-Ch 600V 0.168 Ohm 17A Mdmesh II | 30 V | Through Hole | TO-220-3 | Tube | 1 Channel | Si | N-Channel | 650 V | 17 A | 168 mOhms | 3 V | 46 nC | ||||||||
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VIEW | STMicroelectronics | MOSFET N-Ch 600V 0.168 Ohm 17A Mdmesh II | 30 V | SMD/SMT | TO-263-3 | Reel | 1 Channel | Si | N-Channel | 600 V | 17 A | 168 mOhms | 3 V | 46 nC | ||||||||
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1,574
In-stock
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Infineon Technologies | MOSFET | 30 V | SMD/SMT | TO-252-3 | - 50 C | + 150 C | 1 Channel | Si | N-Channel | 800 V | 17 A | 280 mOhms | 3 V | 36 nC | Enhancement | CoolMOS |