- Mounting Style :
- Package / Case :
- Qg - Gate Charge :
8 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | |
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521
In-stock
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STMicroelectronics | MOSFET N-CH 600V 0.135Ohm typ. 22A MDmesh M2 | 25 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 24 A | 120 mOhms | 3 V | 37 nC | |||||
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413
In-stock
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STMicroelectronics | MOSFET N-CH 600V 0.135Ohm typ. 22A MDmesh M2 | 25 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 24 A | 120 mOhms | 3 V | 37 nC | |||||
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521
In-stock
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STMicroelectronics | MOSFET N-CH 600V 0.135Ohm typ. 22A MDmesh M2 | 25 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 24 A | 120 mOhms | 3 V | 37 nC | |||||
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4,915
In-stock
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Diodes Incorporated | MOSFET N-Ch 31V to 99V 60V 120mOhm 606pF | 20 V | SMD/SMT | X1-DFN1616-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 60 V | 2.5 A | 120 mOhms | 3 V | 12.3 nC | Enhancement | ||||
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79
In-stock
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Toshiba | MOSFET Power MOSFET N-Channel | 30 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 25 A | 120 mOhms | 3 V | 60 nC | Enhancement | ||||
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133
In-stock
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Toshiba | MOSFET Power MOSFET N-Channel | 30 V | Through Hole | TO-220FP-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 25 A | 120 mOhms | 3 V | 60 nC | Enhancement | ||||
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5
In-stock
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Microsemi | MOSFET Power MOSFET - MOS7 | 30 V | Screw Mount | SOT-227-4 | - 55 C | + 150 C | 1 Channel | Si | N-Channel | 600 V | 31 A | 120 mOhms | 3 V | 215 nC | Enhancement | |||||
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45
In-stock
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Toshiba | MOSFET Power MOSFET N-Channel | 30 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 25 A | 120 mOhms | 3 V | 60 nC | Enhancement |