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Vgs - Gate-Source Voltage :
Packaging :
Vds - Drain-Source Breakdown Voltage :
Id - Continuous Drain Current :
Rds On - Drain-Source Resistance :
4 products
IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Vgs - Gate-Source Voltage Mounting Style Package / Case Minimum Operating Temperature Maximum Operating Temperature Packaging Number of Channels Technology Transistor Polarity Vds - Drain-Source Breakdown Voltage Id - Continuous Drain Current Rds On - Drain-Source Resistance Vgs th - Gate-Source Threshold Voltage Qg - Gate Charge Channel Mode
STF11N60DM2
1+
$1.560
10+
$1.320
100+
$1.060
500+
$0.925
RFQ
984
In-stock
STMicroelectronics MOSFET POWER MOSFET 25 V Through Hole TO-220FP-3 - 55 C + 150 C   1 Channel Si N-Channel 600 V 10 A 370 mOhms 3 V 16.5 nC Enhancement
STP11N60DM2
1+
$1.560
10+
$1.330
100+
$1.060
500+
$0.928
RFQ
908
In-stock
STMicroelectronics MOSFET POWER MOSFET 25 V Through Hole TO-220-3 - 55 C + 150 C   1 Channel Si N-Channel 600 V 10 A 370 mOhms 3 V 16.5 nC Enhancement
STFI8N80K5
1+
$2.890
10+
$2.460
100+
$2.130
250+
$2.020
RFQ
1,470
In-stock
STMicroelectronics MOSFET N-CH 800V 0.8Ohm typ 6A Zener-protected 30 V Through Hole TO-281-3 - 55 C + 150 C Tube 1 Channel Si N-Channel 800 V 6 A 950 mOhms 3 V 16.5 nC Enhancement
STD11N60DM2
1+
$1.630
10+
$1.390
100+
$1.070
500+
$0.939
2500+
$0.658
RFQ
2,348
In-stock
STMicroelectronics MOSFET POWER MOSFET 25 V SMD/SMT TO-252-3 - 55 C + 150 C Reel 1 Channel Si N-Channel 600 V 10 A 370 mOhms 3 V 16.5 nC Enhancement
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