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- Package / Case :
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- 10.5 mOhms, 10.5 mOhms (1)
- 105 mOhms (1)
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- 13 mOhms, 20 mOhms (1)
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- 20 mOhms, 40 mOhms (1)
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- 350 mOhms (1)
- 36 mOhms (1)
- 5.8 mOhms (1)
- 5.9 mOhms (1)
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20 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Pd - Power Dissipation | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | Package | Factory Pack Quantity | RoHS | |
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GET PRICE |
15,800
In-stock
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NXP Semiconductors | MOSFET BUK7K6R8-40E/SOT1205/LFPAK56D | - 20 V, + 20 V | Tape & Reel (TR) | 2 Channel | 64 W | N-Channel | 40 V | 40 A | 5.8 mOhms | 3 V | 28.9 nC | LFPAK-56D-8 | 1500 | Green available | |||||||||
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9,692
In-stock
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Diodes Incorporated | MOSFET MOSFET BVDSS: 41V-60 1V-60V SO-8 T&R 2.5K | 20 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel | 60 V | 5 A | 55 mOhms | 3 V | 22.4 nC | Enhancement | ||||||||
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2,282
In-stock
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Fairchild Semiconductor | MOSFET PT5 100/20V Dual Nch Power Trench MOSFET | 20 V | SMD/SMT | PQFN-12 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel | 100 V | 24 A | 36 mOhms | 3 V | 24 nC | PowerTrench Power Clip | ||||||||
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3,169
In-stock
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Fairchild Semiconductor | MOSFET 100V Dual N-Channel PowerTrench MOSFET | 20 V | SMD/SMT | Power-33-8 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel | 100 V, 100 V | 39 A, 39 A | 10.5 mOhms, 10.5 mOhms | 3 V | 21 nC | Enhancement | PowerTrench Power Clip | |||||||
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1,819
In-stock
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Fairchild Semiconductor | MOSFET PT7 80/20V Dual Nch PowerTrench MOSFET | 20 V | SMD/SMT | PQFN-12 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel | 80 V | 40 A | 8.2 mOhms | 3 V | Enhancement | Power Clip | ||||||||
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5,945
In-stock
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IR / Infineon | MOSFET MOSFT DUAL NCh 20V 3.5A | 12 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel | 20 V | 3.5 A | 150 mOhms | 3 V | 15 nC | |||||||||
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1,780
In-stock
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Fairchild Semiconductor | MOSFET 100V Dual N-Channel PowerTrench MOSFET | 20 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel | 100 V | 2.7 A | 105 mOhms | 3 V | 1.7 nC | PowerTrench | ||||||||
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1,221
In-stock
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IR / Infineon | MOSFET AUTO 50V 1 N-CH HEXFET 130mOhms | 20 V | SMD/SMT | SO-8 | - 55 C | + 175 C | Reel | 2 Channel | Si | N-Channel | 50 V | 3 A | 200 mOhms | 3 V | 10 nC | Enhancement | ||||||||
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1,768
In-stock
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Diodes Incorporated | MOSFET N-Ch Enh Mode FET 60Vdss 20Vgss | 20 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel | 60 V | 3.3 A | 70 mOhms | 3 V | 12.3 nC | Enhancement | ||||||||
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1,286
In-stock
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Diodes Incorporated | MOSFET N-Ch Enh Mode FET 40Vdss 20Vgss | 20 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel | 40 V | 7 A | 20 mOhms | 3 V | 19.1 nC | Enhancement | ||||||||
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20
In-stock
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IXYS | MOSFET PHASE LEG MOSFET MOD HALF-BRIDGE 600V 1... | 30 V | Through Hole | ISOPLUS-i4-PAK-5 | - 55 C | + 150 C | Tube | 2 Channel | Si | N-Channel | 600 V | 12 A | 350 mOhms | 3 V | 58 nC | |||||||||
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2,263
In-stock
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Diodes Incorporated | MOSFET 30V N & P Comp FET Enh 20Vgss Low Rdson | 20 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel, P-Channel | 30 V | 6.5 A, 6.2 A | 22 mOhms, 29 mOhms | 3 V | 6 nC, 10.9 nC | Enhancement | ||||||||
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2,026
In-stock
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Texas instruments | MOSFET 60-V Dual N-Channel Power MOSFET | 20 V | SMD/SMT | SOIC-8 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel | 60 V | 15 A | 23 mOhms | 3 V | 7.2 nC | NexFET | ||||||||
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445
In-stock
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Texas instruments | MOSFET 60V Dual NCh NexFET Pwr MOSFET | 20 V | SMD/SMT | SOIC-8 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel | 60 V | 15 A | 27 mOhms | 3 V | 7.2 nC | Enhancement | ||||||||
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3,988
In-stock
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IR / Infineon | MOSFET 40V Dual N Channel HEXFET | 20 V | SMD/SMT | PQFN-8 | - 55 C | + 175 C | Reel | 2 Channel | Si | N-Channel | 40 V | 70 A | 5.9 mOhms | 3 V | 40 nC | Enhancement | ||||||||
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25,461
In-stock
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Texas instruments | MOSFET 60-V Dual N-Channel Power MOSFET | 20 V | SMD/SMT | SOIC-8 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel | 60 V | 16 A | 12.5 mOhms | 3 V | 14 nC | NexFET | ||||||||
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25,461
In-stock
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Texas instruments | MOSFET 60V Dual NCh NexFET Pwr MOSFET | 20 V | SMD/SMT | SOIC-8 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel | 60 V | 16 A | 15 mOhms | 3 V | 14 nC | Enhancement | ||||||||
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6,000
In-stock
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Fairchild Semiconductor | MOSFET 100V Sym Dual NCh MOSFET PowerTrench | 20 V | SMD/SMT | Power-56-8 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel | 100 V | 10 A, 8 A | 13 mOhms, 20 mOhms | 3 V | Enhancement | Power Stage PowerTrench | ||||||||
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2,468
In-stock
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Diodes Incorporated | MOSFET Comp ENH FET 40VDs 20Vgs 1.3W | 20 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel, P-Channel | 40 V, - 40 V | 7 A | 20 mOhms, 40 mOhms | 3 V | 19.1 nC, 21.5 nC | Enhancement | ||||||||
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VIEW | Infineon Technologies | MOSFET 100V DUAL N-CH HEXFET | 20 V | SMD/SMT | PQFN-8 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel | 100 V | 2.3 A | 195 mOhms | 3 V | 4.2 nC |
