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- Rds On - Drain-Source Resistance :
- Qg - Gate Charge :
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8 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | |
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138
In-stock
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IXYS | MOSFET | 30 V | Through Hole | TO-264-3 | - 55 C | + 150 C | Si | N-Channel | 650 V | 102 A | 30 mOhms | 3 V | 152 nC | Enhancement | |||||
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31
In-stock
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Microsemi | MOSFET Power MOSFET - CoolMOS | 20 V | Through Hole | TO-264-3 | - 55 C | + 150 C | Reel | Si | N-Channel | 600 V | 94 A | 30 mOhms | 3 V | 505 nC | Enhancement | ||||
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42
In-stock
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Microsemi | MOSFET Power MOSFET - MOS8 | 30 V | Through Hole | TO-264-3 | - 55 C | + 150 C | 1 Channel | Si | N-Channel | 600 V | 45 A | 130 mOhms | 3 V | 215 nC | Enhancement | ||||
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33
In-stock
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Microsemi | MOSFET Power MOSFET - MOS8 | 30 V | Through Hole | TO-264-3 | - 55 C | + 150 C | 1 Channel | Si | N-Channel | 600 V | 60 A | 90 mOhms | 3 V | 280 nC | Enhancement | ||||
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3
In-stock
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Microsemi | MOSFET Power FREDFET - MOS7 | 30 V | Through Hole | TO-264-3 | - 55 C | + 150 C | 1 Channel | Si | N-Channel | 1000 V | 38 A | 260 mOhms | 3 V | 267 nC | Enhancement | ||||
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66
In-stock
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Microsemi | MOSFET Power MOSFET - CoolMOS | 20 V | Through Hole | TO-264-3 | - 55 C | + 150 C | Reel | Si | N-Channel | 800 V | 34 A | 125 mOhms | 3 V | 180 nC | Enhancement | ||||
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15
In-stock
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Microsemi | MOSFET Power MOSFET - MOS8 | 30 V | Through Hole | TO-264-3 | - 55 C | + 150 C | Bulk | 1 Channel | Si | N-Channel | 500 V | 75 A | 75 mOhms | 3 V | 290 nC | Enhancement | |||
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26
In-stock
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Microsemi | MOSFET POWER MOS 7 MOSFET | 30 V | Through Hole | TO-264-3 | - 55 C | + 150 C | 1 Channel | Si | N-Channel | 500 V | 57 A | 75 mOhms | 3 V | 125 nC | Enhancement |
