- Vgs - Gate-Source Voltage :
- Vds - Drain-Source Breakdown Voltage :
- Rds On - Drain-Source Resistance :
- Qg - Gate Charge :
- Applied Filters :
2 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | |
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596
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STMicroelectronics | MOSFET N-Ch 200V 0.01 Ohm 130A STripFET II | 20 V | Through Hole | Max247-3 | Tube | 1 Channel | Si | N-Channel | 200 V | 130 A | 10 mOhms | 3 V | 338 nC | ||||||
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100
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STMicroelectronics | MOSFET N-channel 1050 V, 0.110 Ohm typ., 46 A MDmesh DK5 Power M... | +/- 30 V | Through Hole | Max247-3 | - 55 C | + 150 C | Tube | 1 Channel | N-Channel | 1050 V | 44 A | 0.1 Ohms | 3 V | 175 nC | Enhancement |
