- Mounting Style :
- Minimum Operating Temperature :
- Number of Channels :
- Id - Continuous Drain Current :
-
- 10 A (1)
- 100 A (4)
- 105 A (1)
- 110 A (3)
- 112 A (1)
- 114 A (1)
- 12 A (1)
- 120 A (5)
- 13 A (1)
- 14 A (1)
- 160 A (3)
- 17 A (1)
- 171 A (1)
- 174 A (1)
- 18 A (1)
- 180 A (1)
- 19 A (1)
- 195 A (1)
- 219 A (1)
- 27 A (1)
- 3 A (1)
- 30 A (1)
- 320 A (1)
- 35 A (2)
- 38 A (1)
- 42 A (2)
- 5 A (1)
- 50 A (3)
- 51 A (4)
- 522 A (2)
- 60 A (2)
- 61 A (1)
- 70 A (1)
- 75 A (3)
- 80 A (4)
- 84 A (1)
- 86 A (2)
- 89 A (2)
- 9 A (1)
- 99 A (2)
- Rds On - Drain-Source Resistance :
-
- 1.25 mOhms (1)
- 1.5 mOhms (1)
- 1.6 mOhms (1)
- 1.7 mOhms (1)
- 1.8 mOhms (1)
- 1.9 mOhms (2)
- 10 mOhms (1)
- 10.3 mOhms (1)
- 100 mOhms (1)
- 11 mOhms (2)
- 11.3 mOhms (2)
- 11.7 mOhms (1)
- 12 mOhms (1)
- 12.1 mOhms (1)
- 122 mOhms (1)
- 13.5 mOhms (6)
- 130 mOhms (1)
- 14 mOhms (1)
- 145 mOhms (1)
- 15 mOhms (1)
- 165 mOhms (1)
- 17 mOhms (1)
- 170 mOhms (1)
- 19 mOhms (1)
- 2 mOhms (2)
- 2.1 mOhms (1)
- 2.5 mOhms (1)
- 2.8 mOhms (1)
- 200 mOhms (1)
- 25 mOhms (1)
- 26 mOhms (1)
- 3 mOhms (1)
- 3.2 mOhms (1)
- 3.4 mOhms (1)
- 3.7 mOhms (1)
- 35 mOhms (1)
- 36 mOhms (1)
- 4 mOhms (1)
- 4.6 mOhms (1)
- 4.7 mOhms (1)
- 4.8 mOhms (2)
- 430 mOhms (1)
- 5.6 mOhms (1)
- 5.9 mOhms (3)
- 63 mOhms (2)
- 7.6 mOhms (1)
- 750 Ohms (1)
- 750 uOhms (1)
- 78 mOhms (1)
- 8 mOhms (4)
- 9.2 mOhms (1)
- 90.5 mOhms (1)
- Qg - Gate Charge :
-
- 10 nC (1)
- 100 nC (2)
- 103 nC (1)
- 11.3 nC (1)
- 110 nC (1)
- 117 nC (1)
- 120 nC (1)
- 130 nC (3)
- 131 nC (2)
- 137 nC (1)
- 140 nC (2)
- 15.3 nC (1)
- 150 nC (1)
- 16 nC (1)
- 18 nC (1)
- 206 nC (1)
- 207 nC (1)
- 210 nC (1)
- 216 nC (2)
- 227 nC (1)
- 23 nC (2)
- 24 nC (5)
- 28 nC (1)
- 29.5 nC (1)
- 30 nC (1)
- 305 nC (2)
- 340 nC (1)
- 35 nC (1)
- 4.7 nC (1)
- 40 nC (1)
- 41 nC (1)
- 41.3 nC (2)
- 44 nC (2)
- 44.5 nC (1)
- 49 nC (1)
- 57 nC (1)
- 60 nC (1)
- 61 nC (2)
- 65 nC (1)
- 66 nC (1)
- 67 nC (1)
- 7.1 nC (1)
- 71 nC (1)
- 76 nC (1)
- 77 nC (1)
- 8 nC (1)
- 84 nC (1)
- 86 nC (1)
- 90 nC (2)
- 91 nC (1)
- 92 nC (1)
68 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
2,480
In-stock
|
STMicroelectronics | MOSFET N-channel 40 V, 3.8 mOhm typ., 120 A STripFET F6 Power M... | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 40 V | 80 A | 2.5 mOhms | 3 V | 130 nC | Enhancement | ||||
|
|
3,068
In-stock
|
Infineon Technologies | MOSFET 55V 1 N-CH HEXFET 8mOhms 44nC | 16 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 55 V | 89 A | 12 mOhms | 3 V | 44 nC | Enhancement | ||||
|
|
750
In-stock
|
Fairchild Semiconductor | MOSFET 40V 2.4MOHM D2PAK-7L PowerTrench MOSFET | 20 V | SMD/SMT | TO-263-7 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 40 V | 219 A | 2 mOhms | 3 V | 84 nC | PowerTrench | ||||
|
|
2,375
In-stock
|
IR / Infineon | MOSFET 40V StrongIRFET 240A, .75mOhm,305nC | 20 V | SMD/SMT | TO-263-7 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 40 V | 522 A | 750 Ohms | 3 V | 305 nC | Enhancement | StrongIRFET | |||
|
|
897
In-stock
|
IR / Infineon | MOSFET Auto 40V N-Ch FET 0.97mOhm 195A | 20 V | SMD/SMT | TO-263-7 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 40 V | 522 A | 750 uOhms | 3 V | 305 nC | Enhancement | CoolIRFet | |||
|
|
3,367
In-stock
|
Infineon Technologies | MOSFET MV POWER MOS | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | Si | N-Channel | 120 V | 75 A | 9.2 mOhms | 3 V | 49 nC | Enhancement | |||||
|
|
4,481
In-stock
|
Infineon Technologies | MOSFET MV POWER MOS | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | Si | N-Channel | 100 V | 35 A | 19 mOhms | 3 V | 23 nC | Enhancement | |||||
|
|
3,885
In-stock
|
IR / Infineon | MOSFET MOSFT 55V 89A 8mOhm 44nC Log Lvl | SMD/SMT | TO-252-3 | + 175 C | Reel | 1 Channel | Si | N-Channel | 55 V | 89 A | 8 mOhms | 3 V | 66 nC | |||||||
|
|
756
In-stock
|
Infineon Technologies | MOSFET TRENCH_MOSFETS | 20 V | Through Hole | TO-247-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 200 V | 75 A | 17 mOhms | 3 V | 150 nC | Enhancement | ||||
|
|
1,422
In-stock
|
Infineon Technologies | MOSFET MOSFET, 135V, 168A 6.2 mOhm, 206 nC Qg | 20 V | SMD/SMT | TO-263-7 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 135 V | 160 A | 4.7 mOhms | 3 V | 210 nC | StrongIRFET | ||||
|
|
2,630
In-stock
|
STMicroelectronics | MOSFET N-channel 250 V 17A STripFET II | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 250 V | 17 A | 165 mOhms | 3 V | 29.5 nC | Enhancement | ||||
|
|
937
In-stock
|
IR / Infineon | MOSFET N-CHANNEL 100+ | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 150 V | 99 A | 12.1 mOhms | 3 V | 77 nC | Enhancement | ||||
|
|
2,402
In-stock
|
IR / Infineon | MOSFET 40V Single N-Channel HEXFET | 20 V | SMD/SMT | PQFN-8 | - 55C | + 175 C | Reel | 1 Channel | Si | N-Channel | 40 V | 84 A | 4.6 mOhms | 3 V | 44 nC | Enhancement | ||||
|
|
3,582
In-stock
|
Fairchild Semiconductor | MOSFET 10a 100V 0.165 Ohm 1Ch HS Logic Gate | 16 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 100 V | 10 A | 130 mOhms | 3 V | 16 nC | Enhancement | ||||
|
|
2,879
In-stock
|
Fairchild Semiconductor | MOSFET 14A 150V MOSFET | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 150 V | 14 A | 90.5 mOhms | 3 V | 11.3 nC | |||||
|
|
1,071
In-stock
|
STMicroelectronics | MOSFET N-Ch 60 Volt 55 Amp | 20 V | Through Hole | TO-220FP-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 60 V | 50 A | 15 mOhms | 3 V | 44.5 nC | Enhancement | ||||
|
|
601
In-stock
|
Fairchild Semiconductor | MOSFET N-Channel Power Trench MOSFET | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 80 V | 110 A | 2 mOhms | 3 V | 131 nC | PowerTrench | ||||
|
|
2,341
In-stock
|
Infineon Technologies | MOSFET TRENCH_MOSFETS | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 200 V | 12 A | 170 mOhms | 3 V | 15.3 nC | Enhancement | StrongIRFET | |||
|
|
2,199
In-stock
|
Infineon Technologies | MOSFET MV POWER MOS | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | Si | N-Channel | 100 V | 27 A | 25 mOhms | 3 V | 18 nC | Enhancement | |||||
|
|
3,466
In-stock
|
Infineon Technologies | MOSFET 55V 1 N-CH HEXFET 27mOhms 32nC | 16 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 55 V | 60 A | 13.5 mOhms | 3 V | 23 nC | Enhancement | ||||
|
|
2,612
In-stock
|
Infineon Technologies | MOSFET MV POWER MOS | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 100 V | 13 A | 78 mOhms | 3 V | 8 nC | Enhancement | ||||
|
|
3,024
In-stock
|
Infineon Technologies | MOSFET N-Ch 250V 5A DPAK-2 | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 250 V | 5 A | 430 mOhms | 3 V | 4.7 nC | Enhancement | |||||
|
|
2,709
In-stock
|
Infineon Technologies | MOSFET MOSFET N-CH 40V 56A DPAK | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 40 V | 120 A | 3 mOhms | 3 V | 65 nC | Enhancement | StrongIRFET | |||
|
|
503
In-stock
|
Infineon Technologies | MOSFET N-Ch 120V 100A TO220-3 OptiMOS 3 | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 120 V | 100 A | 4.8 mOhms | 3 V | 137 nC | OptiMOS | ||||
|
|
800
In-stock
|
Infineon Technologies | MOSFET MOSFT 40V 160A 4mOhm 93.3nC Log Lvl | SMD/SMT | TO-252-3 | + 175 C | Reel | 1 Channel | Si | N-Channel | 40 V | 160 A | 4 mOhms | 3 V | 140 nC | |||||||
|
|
238
In-stock
|
IR / Infineon | MOSFET N-CHANNEL 100+ | 30 V | Through Hole | TO-247-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 150 V | 171 A | 4.8 mOhms | 3 V | 227 nC | Enhancement | ||||
|
|
424
In-stock
|
IR / Infineon | MOSFET N-CHANNEL 100+ | 20 V | SMD/SMT | TO-263-7 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 150 V | 105 A | 10 mOhms | 3 V | 110 nC | Enhancement | ||||
|
|
440
In-stock
|
IR / Infineon | MOSFET N-CHANNEL 100+ | 20 V | Through Hole | TO-262-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 150 V | 99 A | 10.3 mOhms | 3 V | 120 nC | Enhancement | ||||
|
|
815
In-stock
|
IR / Infineon | MOSFET MOSFET N-CH 150V 86A D2PAK | 30 V | SMD/SMT | TO-263-7 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 150 V | 86 A | 11.7 mOhms | 3 V | 71 nC | Enhancement | ||||
|
|
1,000
In-stock
|
STMicroelectronics | MOSFET POWER MOSFET | 20 V | SMD/SMT | H2PAK-2 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 40 V | 120 A | 1.9 mOhms | 3 V | 130 nC | Enhancement |
