- Manufacture :
- Vgs - Gate-Source Voltage :
- Package / Case :
- Vds - Drain-Source Breakdown Voltage :
- Id - Continuous Drain Current :
- Applied Filters :
13 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
9,679
In-stock
|
Diodes Incorporated | MOSFET MOSFET DUAL N-CHAN ENHANCE MODE | 12 V, 12 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel | 20 V, 20 V | 7.63 A, 7.63 A | 19 mOhms, 19 mOhms | 500 mV, 500 mV | 15.6 nC, 15.6 nC | Enhancement | ||||
|
3,139
In-stock
|
Diodes Incorporated | MOSFET MOSFET N-CHAN | 12 V, 12 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel | 20 V, 20 V | 9.5 A, 9.5 A | 11 mOhms, 11 mOhms | 500 mV, 500 mV | 26 nC, 26 nC | Enhancement | ||||
|
2,019
In-stock
|
Diodes Incorporated | MOSFET DUAL N-CH MOSFET 20V | 12 V, 12 V | SMD/SMT | PowerDI3030-8 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel | 20 V, 20 V | 6.8 A, 6.8 A | 16 mOhms, 16 mOhms | 500 mV, 500 mV | 8.5 nC, 8.5 nC | Enhancement | ||||
|
5,865
In-stock
|
Diodes Incorporated | MOSFET N-Ch Enh Mode FET 60V 20Vgss 1.2A | 20 V, 20 V | SMD/SMT | SOT-363-6 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel | 60 V, 60 V | 350 mA, 350 mA | 1.2 Ohms, 1.2 Ohms | 500 mV, 500 mV | 400 pC, 400 pC | Enhancement | ||||
|
3,621
In-stock
|
Diodes Incorporated | MOSFET MOSFET SOT-26 20V, 3.2/4.2A | 8 V, 8 V | SMD/SMT | SOT-26-6 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel | 20 V, 20 V | 4.2 A, 4.2 A | 22 mOhms, 22 mOhms | 500 mV, 500 mV | 8.3 nC, 8.3 nC | Enhancement | ||||
|
2,990
In-stock
|
onsemi | MOSFET NCH+NCH 8.5A 24V 2.5V DRI | 12 V, 12 V | SMD/SMT | EMH-8 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel | 24 V, 24 V | 9 A, 9 A | 12 mOhms, 12 mOhms | 500 mV, 500 mV | 4.4 nC, 4.4 nC | Enhancement | ||||
|
7,930
In-stock
|
onsemi | MOSFET NCH+NCH 2.5V DRIVE | 10 V, 10 V | SMD/SMT | EFCP1010-4 | + 150 C | Reel | 2 Channel | Si | N-Channel | 24 V, 24 V | 37.5 mOhms, 37.5 mOhms | 500 mV, 500 mV | 7.5 nC, 7.5 nC | Enhancement | ||||||
|
2,995
In-stock
|
onsemi | MOSFET NCH+NCH 11A 12V EMH8 | 12 V, 12 V | SMD/SMT | EMH-8 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel | 12 V, 12 V | 11 A, 11 A | 8 mOhms, 8 mOhms | 500 mV, 500 mV | 16 nC, 16 nC | Enhancement | ||||
|
352
In-stock
|
Diodes Incorporated | MOSFET N-Ch Enh Mode FET 60V 20Vgss 1.2A | 20 V, 20 V | SMD/SMT | SOT-363-6 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel | 60 V, 60 V | 350 mA, 350 mA | 1.2 Ohms, 1.2 Ohms | 500 mV, 500 mV | 500 pC, 500 pC | Enhancement | ||||
|
5,000
In-stock
|
Diodes Incorporated | MOSFET ENHANCE MODE MOSFET DUAL N-CHAN | 12 V, 12 V | SMD/SMT | TSSOP-8 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel | 20 V, 20 V | 6.7 A, 6.7 A | 19 mOhms, 19 mOhms | 500 mV, 500 mV | 5.2 nC, 5.2 nC | Enhancement | ||||
|
15,000
In-stock
|
Diodes Incorporated | MOSFET N-Ch Dual MOSFET 20V VDSS 8V VGSS | 8 V, 8 V | SMD/SMT | TSSOP-8 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel | 20 V, 20 V | 4.9 A, 4.9 A | 19 mOhms, 19 mOhms | 500 mV, 500 mV | 9.6 nC, 9.6 nC | Enhancement | ||||
|
4,125
In-stock
|
onsemi | MOSFET NCH+NCH 23A 20V 4.4M OHM | 12 V, 12 V | SMD/SMT | CSP-6 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel | 20 V, 20 V | 4.2 mOhms, 4.2 mOhms | 500 mV, 500 mV | 27 nC, 27 nC | Enhancement | |||||
|
2,450
In-stock
|
Diodes Incorporated | MOSFET Dual N-Ch Enh FET 30V 9.8A 20Vdss | 12 V, 12 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel | 20 V, 20 V | 9.5 A, 9.5 A | 11 mOhms, 11 mOhms | 500 mV, 500 mV | 26 nC, 26 nC | Enhancement |